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Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.647, 页码: 1054-1060
作者:  X.F. Chen;  Z.Q. Sun;  H.S. Chen;  J.W. Zhang;  R. Ma
收藏  |  浏览/下载:5/0  |  提交时间:2019/04/22
Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.646, 页码: 10-15
作者:  Z.Q. Sun;  H.S. Chen;  Y.M. Liu;  J.W. Zhang;  P.H. Wang
收藏  |  浏览/下载:5/0  |  提交时间:2019/04/22
Effects of boron incorporation on the structural, optical and electrical properties of sol–gel-derived ZrO2 gate dielectrics. 期刊论文
Journal of Alloys & Compounds, 2015, 卷号: Vol.649, 页码: 1273-1279
作者:  Jin,P.;  Sun,Z.Q.;  Zhang,M.;  Zheng,C.Y.;  Chen,X.F.
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/22
Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.642, 页码: 172-176
作者:  J.G. Lv;  X.F. Chen;  Z.Q. Sun;  Y.M. Liu;  K.R. Zhu
收藏  |  浏览/下载:2/0  |  提交时间:2019/04/22
Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.647, 页码: 1035-1039
作者:  J.G. Lv;  X.F. Chen;  Z.Q. Sun;  P.H. Wang;  X.S. Chen
收藏  |  浏览/下载:3/0  |  提交时间:2019/04/24


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