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AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 卷号: 62, 期号: [db:dc_citation_issue]
作者:  Zhang, Lu;  Wang, Xiaoliang;  Xiao, Hongling;  Chen, Hong;  Feng, Chun
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/03
The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: [db:dc_citation_issue]
作者:  Liang, Jing;  Hongling, Xiao;  Xiaoliang, Wang;  Cuimei, Wang;  Qingwen, Deng
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/10
Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: [db:dc_citation_issue]
作者:  Jing, Liang;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/10
Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2013, 卷号: 414, 期号: [db:dc_citation_issue], 页码: 110-114
作者:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/10


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