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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: [db:dc_citation_issue]
作者:  Ding, Jieqin;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Chen, Hong
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