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浏览/检索结果: 共25条，第1-10条 帮助 限定条件 发表日期：2012    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation of Collisional Cross Sections of 40S State Using Ultracold Caesium Rydberg Gas 期刊论文 journal of the physical society of japan, 2012, 卷号: 81, 期号: 7, 页码: 74302 Feng, ZG; Zhao, JM; Jia, ST; Zheng, WH 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/17 Distribution of electric field and design of devices in GaN avalanche photodiodes 期刊论文 science china-physics mechanics & astronomy, 2012, 卷号: 55, 期号: 4, 页码: 619-624 Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/17 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H 收藏  |  浏览/下载：17/0  |  提交时间：2013/04/19 Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire 期刊论文 journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98 Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07 Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.) 收藏  |  浏览/下载：8/0  |  提交时间：2013/04/02 Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact 期刊论文 acta physica sinica, 2012, 卷号: 61, 期号: 21, 页码: 217302 Wang Xiao-Yong; Chong Ming; Zhao De-Gang; Su Yan-Mei 收藏  |  浏览/下载：16/0  |  提交时间：2013/10/10 Ferromagnetism in Fe-doped CuO nanopowder 期刊论文 journal of semiconductors, 2012, 卷号: 33, 期号: 1, 页码: 013001 Zhao, Jing; Xia, Qinglin; Li, Jinmin 收藏  |  浏览/下载：14/0  |  提交时间：2013/05/07 Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis 期刊论文 optics and lasers in engineering, 2012, 卷号: 50, 期号: 5, 页码: 796-799 Liu, QL; Zhao, CW; Xing, YM; Su, SJ; Cheng, BW 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/17 Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文 journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48 Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui) 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/27 Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 19, 页码: 191102 Zheng CC (Zheng, C. C.); Xu SJ (Xu, S. J.); Zhang F (Zhang, F.); Ning JQ (Ning, J. Q.); Zhao DG (Zhao, D. G.); Yang H (Yang, H.); Che CM (Che, C. M.) 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/27