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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2007    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Ning, J (Ning, J.); Zhao, YM (Zhao, Y. M.); Luo, MC (Luo, M. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：90/9  |  提交时间：2010/03/29 AVALANCHE PHOTODIODES  AREA   Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Zhao, YM (Zhao, Y. M.); Ning, J (Ning, J.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：103/26  |  提交时间：2010/03/29 homoepitaxy  4H-SiC  multi-epilayer  UV detection  p(+)-pi-n(-)  ULTRAVIOLET PHOTODETECTOR  EPITAXIAL-GROWTH   Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文 journal of crystal growth, 2007, 卷号: 306, 期号: 1, 页码: 12-15 Wei, HY (Wei, H. Y.); Cong, GW (Cong, G. W.); Zhang, PF (Zhang, P. F.); Hu, WG (Hu, W. G.); Wu, JJ (Wu, J. J.); Jiao, CM (Jiao, C. M.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/29 nanostructure   Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013 Zhang PF (Zhang, P. F.); Liu XL (Liu, X. L.); Wei HY (Wei, H. Y.); Fan HB (Fan, H. B.); Liang ZM (Liang, Z. M.); Jin P (Jin, P.); Yang SY (Yang, S. Y.); Jiao CM (Jiao, C. M.); Zhu QS (Zhu, Q. S.); Wang ZG (Wang, Z. G.) 收藏  |  浏览/下载：21/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文 6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006 Liu, XF (Liu, X. F.); Sun, GS (Sun, G. S.); Li, JM (Li, J. M.); Zhao, YM (Zhao, Y. M.); Li, JY (Li, J. Y.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Luo, MC (Luo, M. C.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：162/28  |  提交时间：2010/03/29 micro-raman  4H-SiC  defects  3C-inclusions  triangle-shaped inclusion  EPITAXIAL LAYERS  SILICON-CARBIDE