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科研机构
半导体研究所 [15]
内容类型
期刊论文 [12]
会议论文 [3]
发表日期
2010 [2]
2008 [2]
2007 [2]
2003 [3]
2002 [2]
2001 [3]
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半导体材料 [8]
光电子学 [4]
半导体物理 [1]
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Highly efficient photoluminescence of er2sio5 films grown by reactive magnetron sputtering method
期刊论文
Journal of luminescence, 2010, 卷号: 130, 期号: 3, 页码: 411-414
作者:
Zheng, J.
;
Ding, W. C.
;
Xue, C. L.
;
Zuo, Y. H.
;
Cheng, B. W.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Erbium silicate
Photoluminescence
Si photonics
Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method
期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 3, 页码: 411-414
作者:
Xue CL
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  |  
浏览/下载:28/0
  |  
提交时间:2010/04/05
Erbium silicate
Photoluminescence
Si photonics
WAVE-GUIDE AMPLIFIERS
CRYSTALLINE FILMS
ERBIUM SILICATE
ENERGY-TRANSFER
SI
ER3+
EXCITATION
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Numerical study of a high-resolution far-field scanning optical microscope via a surface plasmon-modulated light source
期刊论文
Journal of lightwave technology, 2007, 卷号: 25, 期号: 3, 页码: 830-833
作者:
Guo, Baoshan
;
Gan, Qiaoqiang
;
Song, Guofeng
;
Gao, Jianxia
;
Chen, Lianghui
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/05/12
Finite difference time domain (fdtd) method
Scanning optical microscope
Surface plasmon subwavelength optics
Numerical study of a high-resolution far-field scanning optical microscope via a surface plasmon-modulated light source
期刊论文
journal of lightwave technology, 2007, 卷号: 25, 期号: 3, 页码: 830-833
Guo BS (Guo Baoshan)
;
Gan QQ (Gan Qiaoqiang)
;
Song GF (Song Guofeng)
;
Gao JX (Gao Jianxia)
;
Chen LH (Chen Lianghui)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/03/29
finite difference time domain (FDTD) method
Defects in GaN films grown on Si(111) substrates by metal-organic chemical vapour deposition
期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 10, 页码: 1811-1814
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:250/3
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
HETEROEPITAXIAL GROWTH
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:
Zhang SM
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  |  
浏览/下载:292/3
  |  
提交时间:2010/08/12
in situ laser reflectometry
lateral overgrowths
surface morphology
metalorganic chemical vapor deposition
GaN
CHEMICAL-VAPOR-DEPOSITION
LIGHT-EMITTING-DIODES
SAPPHIRE SUBSTRATE
NUCLEATION LAYERS
QUALITY
TEMPERATURE
A novel application to quantum dot materials to the active region of superluminescent diodes
期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:
Li CM
;
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
quantum dots
strain
molecular beam epitaxy
superluminescent diodes
1.3 MU-M
HIGH-POWER
INTEGRATED ABSORBER
INAS ISLANDS
SPECTRUM
WINDOW
LAYER
SIZE
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