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科研机构
半导体研究所 [22]
内容类型
期刊论文 [20]
会议论文 [2]
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2011 [4]
2010 [2]
2009 [4]
2008 [1]
2006 [3]
2005 [1]
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半导体材料 [11]
光电子学 [5]
半导体物理 [4]
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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  |  
浏览/下载:70/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate
期刊论文
materials letters, 2011, 卷号: 65, 期号: 5, 页码: 860-862
Zheng J
;
Tao YL
;
Wang W
;
Zhang LZ
;
Zuo YH
;
Xue CL
;
Cheng BW
;
Wang QM
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  |  
浏览/下载:66/3
  |  
提交时间:2011/07/05
Luminescence
Optical materials and properties
Sputtering
Thin films
PHOTOLUMINESCENCE
ER3+
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure
期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:
Xue CL
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  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
Multilayers
Inorganic compounds
Sputtering
Optical properties
DOPED SI/SIO2 SUPERLATTICES
ERBIUM SILICATE
ER3+
LUMINESCENCE
FILMS
PHOTOLUMINESCENCE
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:
Yin ZG
;
Zhang XW
;
Tan HR
;
Fan YM
;
Zhang SG
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  |  
浏览/下载:43/3
  |  
提交时间:2011/07/05
HIGH-PRESSURE SYNTHESIS
VAPOR-DEPOSITION
NUCLEATION
EMISSION
DIAMOND
GROWTH
Multimode resonances in metallically confined square-resonator microlasers
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 5, 页码: art. no. 051104
Che KJ (Che Kai-Jun)
;
Yang YD (Yang Yue-De)
;
Huang YZ (Huang Yong-Zhen)
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  |  
浏览/下载:187/14
  |  
提交时间:2010/04/13
aluminium compounds
finite difference time-domain analysis
gallium compounds
III-V semiconductors
indium compounds
laser cavity resonators
photolithography
refractive index
sputter etching
DIRECTIONAL EMISSION
MICRODISK LASERS
MODES
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.)
;
Zhang XW (Zhang X. W.)
;
Fan YM (Fan Y. M.)
;
Tan HR (Tan H. R.)
;
Yin ZG (Yin Z. G.)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/12/28
Cubic boron nitride
Doping
Ion beam assisted deposition
X-ray photoelectron spectroscopy
RAY PHOTOELECTRON-SPECTROSCOPY
VAPOR-DEPOSITION
SI
NUCLEATION
GROWTH
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:72/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105
作者:
Zhang XW
;
Yin ZG
;
You JB
收藏
  |  
浏览/下载:102/13
  |  
提交时间:2010/03/08
atomic force microscopy
field emission
hydrogen
II-VI semiconductors
plasma materials processing
sputter deposition
wide band gap semiconductors
work function
zinc compounds
Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals
期刊论文
journal of vacuum science & technology b, 2009, 卷号: 27, 期号: 3, 页码: 1093-1096
Wang HL
;
Xing MX
;
Ren G
;
Zheng WH
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  |  
浏览/下载:123/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
photonic crystals
plasma materials processing
semiconductor lasers
sputter etching
Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition
期刊论文
surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456
作者:
Tan HR
;
Zhang XW
;
You JB
;
Fan YM
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  |  
浏览/下载:264/33
  |  
提交时间:2010/03/08
Cubic boron nitride
Stress relaxation
Ion beam assisted deposition
Fourier transformed infrared spectroscopy
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