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CORC

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Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：127/5  |  提交时间：2010/04/22
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB
收藏  |  浏览/下载：26/0  |  提交时间：2010/03/08
Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2006, 卷号: 133, 期号: 1-3, 页码: 117-123
Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen); Wang YT (Wang Yu-Tian)
收藏  |  浏览/下载：33/0  |  提交时间：2010/04/11
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
作者:  Jiang DS
收藏  |  浏览/下载：58/0  |  提交时间：2010/08/12
Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation 期刊论文
applied physics letters, 2001, 卷号: 79, 期号: 7, 页码: 958-960
Luo XD; Xu ZY; Ge WK; Pan Z; Li LH; Lin YW
收藏  |  浏览/下载：125/4  |  提交时间：2010/08/12
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15
Epitaxial growth of GaNAs/GaAs heterostructure materials 期刊论文
thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 249-252
Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12

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