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Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 8
作者:  Wang Li-Guo;  Shen Chao;  Zheng Hou-Zhi;  Zhu Hui;  Zhao Jian-Hua
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
Infrared response of the lateral pin structure of a highly titanium-doped silicon-on-insulator material 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 4
作者:  Ma Zhi-Hua;  Cao Quan;  Zuo Yu-Hua;  Zheng Jun;  Xue Chun-Lai
收藏  |  浏览/下载：38/0  |  提交时间：2019/05/12
Formation of shallow acceptors in zno doped by lithium with the addition of nitrogen 期刊论文
Journal of physics and chemistry of solids, 2011, 卷号: 72, 期号: 6, 页码: 725-729
作者:  Gai, Yanqin;  Tang, Gang;  Li, Jingbo
收藏  |  浏览/下载：50/0  |  提交时间：2019/05/12
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a mn-doped gaas base 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 5
作者:  Shen, C.;  Wang, L. G.;  Zheng, H. Z.;  Zhu, H.;  Chen, L.
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Electron mobility in modulation-doped alsb/inas quantum wells 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：39/4  |  提交时间：2011/07/05
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93507
作者:  Wang LG;  Chen L;  Zhu H
收藏  |  浏览/下载：43/5  |  提交时间：2011/07/05
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05
Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas 期刊论文
Physical review b, 2010, 卷号: 82, 期号: 19, 页码: 4
作者:  Deng, Hui-Xiong;  Li, Jingbo;  Li, Shu-Shen;  Peng, Haowei;  Xia, Jian-Bai
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12

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