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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Observation of the surface circular photogalvanic effect in inn films 期刊论文 Solid state communications, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007 作者:  Zhang, Z.;  Zhang, R.;  Xie, Z. L.;  Liu, B.;  Li, M. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Inn  Surface charge accumulation layer  Spin-dependent current  Spin splitting   Observation of the surface circular photogalvanic effect in InN films 期刊论文 solid state communications, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007 Zhang Z; Zhang R; Xie ZL; Liu B; Li M; Fu DY; Fang HN; Xiu XQ; Lu H; Zheng YD; Chen YH; Tang CG; Wang ZG 收藏  |  浏览/下载：158/1  |  提交时间：2010/03/08 InN  Surface charge accumulation layer  Spin-dependent current  Spin splitting   Improved neutron radiation hardness for si detectors: application of low resistivity starting material and or manipulation of n-eff by selective filling of radiation-induced traps at low temperatures 期刊论文 Ieee transactions on nuclear science, 1999, 卷号: 46, 期号: 3, 页码: 221-227 作者:  Dezillie, B;  Li, Z;  Eremin, V;  Bruzzi, M;  Pirollo, S 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 会议论文 1998 nuclear science symposium (nss), toronto, canada, nov 08-14, 1998 Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 SILICON DETECTORS   Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures 期刊论文 ieee transactions on nuclear science, 1999, 卷号: 46, 期号: 3 part 1, 页码: 221-227 Dezillie B; Li Z; Eremin V; Bruzzi M; Pirollo S; Pandey SU; Li CJ 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 SILICON DETECTORS