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High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors 期刊论文
NANOSCALE, 2020, 卷号: 12, 期号: 42, 页码: 21750-21756
作者:  Zhi-Qiang Fan;   Zhen-Hua Zhang;   Shen-Yuan Yang
收藏  |  浏览/下载：39/0  |  提交时间：2021/05/24
Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors 期刊论文
ACS Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 22, 页码: 19271-19277
作者:  Zhi-Qiang Fan;   Xiang-Wei Jiang;  Jiezhi Chen;   Jun-Wei Luo
收藏  |  浏览/下载：18/0  |  提交时间：2019/11/12
In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides 期刊论文
Physical Review B, 2017, 卷号: 96, 期号: 16, 页码: 165402
作者:  Zhi-Qiang Fan;  Xiang-Wei Jiang;  Jun-Wei Luo;  Li-Ying Jiao;  Ru Huang
收藏  |  浏览/下载：48/0  |  提交时间：2018/06/15
The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
physica status solidi a-applications and materials science, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang
收藏  |  浏览/下载：10/0  |  提交时间：2016/03/22
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with inas quantum dots 期刊论文
Physica e-low-dimensional systems & nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689
作者:  Li, Y. Q.;  Wang, X. D.;  Xu, X. N.;  Liu, W.;  Yang, F. H.
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12
Size-dependent electroluminescence from si quantum dots embedded in amorphous sic matrix 期刊论文
Journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 6
作者:  Rui, Yunjun;  Li, Shuxin;  Xu, Jun;  Song, Chao;  Jiang, Xiaofan
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12

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