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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512 Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H 收藏  |  浏览/下载：65/6  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  GAN  DEPENDENCE  CONTACTS  STATES  NI   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512 Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG 收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05 2-DIMENSIONAL ELECTRON-GAS  INTERFACIAL LAYER  MOBILITY   Determination of the relative permittivity of the AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文 chinese physics b, 2009, 卷号: 18, 期号: 9, 页码: 3980-3984 Zhao JZ; Lin ZJ; Corrigan TD; Zhang Y; Lu YJ; Lu W; Wang ZG; Chen H 收藏  |  浏览/下载：95/25  |  提交时间：2010/03/08 relative permittivity  AlGaN barrier layer  AlGaN/GaN heterostructures   The influence of schottky contact metals on the strain of algan barrier layers 期刊论文 Journal of applied physics, 2008, 卷号: 103, 期号: 4, 页码: 4 作者:  Lin, Zhaojun;  Zhao, Jianzhi;  Corrigan, Timothy D.;  Wang, Zhen;  You, Zhidong 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 The influence of Schottky contact metals on the strain of AlGaN barrier layers 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 4, 页码: art. no. 044503 Lin, ZJ; Zhao, JZ; Corrigan, TD; Wang, Z; You, ZD; Wang, ZG; Lu, W 收藏  |  浏览/下载：53/2  |  提交时间：2010/03/08 PIEZOELECTRIC POLARIZATION  HETEROSTRUCTURES   High-performance logic circuits constructed on single cds nanowires 期刊论文 Nano letters, 2007, 卷号: 7, 期号: 11, 页码: 3300-3304 作者:  Ma, Ren-Min;  Dai, Lun;  Huo, Hai-Bin;  Xu, Wan-Jin;  Oin, G. G. 收藏  |  浏览/下载：10/0  |  提交时间：2019/05/12 Electron mobility related to scattering caused by the strain variation of algan barrier layer in strained algan/gan heterostructures 期刊论文 Applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: 3 作者:  Zhao, Jianzhi;  Lin, Zhaojun;  Corrigan, Timothy D.;  Wang, Zhen;  You, Zhidong 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 High-performance nano-schottky diodes and nano-mesfets made on single cds nanobelts 期刊论文 Nano letters, 2007, 卷号: 7, 期号: 4, 页码: 868-873 作者:   收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507 Zhao J (Zhao, Jianzhi); Lin Z (Lin, Zhaojun); Corrigan TD (Corrigan, Timothy D.); Wang Z (Wang, Zhen); You Z (You, Zhidong); Wang Z (Wang, Zhanguo) 收藏  |  浏览/下载：62/0  |  提交时间：2010/03/29 FIELD-EFFECT TRANSISTORS