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科研机构
半导体研究所 [33]
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期刊论文 [31]
会议论文 [2]
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2011 [5]
2009 [5]
2008 [1]
2007 [1]
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2005 [1]
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半导体材料 [15]
半导体物理 [9]
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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
收藏
  |  
浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 106104
Ma, ZH
;
Cao, Q
;
Zuo, YH
;
Zheng, J
;
Xue, CL
;
Cheng, BW
;
Wang, QM
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
infrared response
ion implantation
rapid thermal annealing
intermediate band solar cell
PHOTODIODE
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:
Yu F
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  |  
浏览/下载:93/6
  |  
提交时间:2011/07/06
separation by oxygen implantation
buried oxide
nitrogen implantation
positive charge density
RADIATION HARDNESS
IMPLANTING NITROGEN
ION-IMPLANTATION
IMPROVEMENT
TECHNOLOGY
OXYGEN
LAYER
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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  |  
浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films
期刊论文
materials letters, 2011, 卷号: 65, 期号: 4, 页码: 667-669
作者:
Liu C
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  |  
浏览/下载:63/7
  |  
提交时间:2011/07/05
Diluted magnetic semiconductors (DMSs)
Ion implantation
Room-temperature ferromagnetic properties
ROOM-TEMPERATURE
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films
期刊论文
materials science and engineering b-advanced functional solid-state materials, 2009, 卷号: 162, 期号: 3, 页码: 209-212
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:92/1
  |  
提交时间:2010/03/08
Ion implantation
Metal organic chemical vapour deposition (MOCVD)
Diluted magnetic semiconductor (DMS)
Nonpolar a-plane GaN
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105
作者:
Zhang XW
;
Yin ZG
;
You JB
收藏
  |  
浏览/下载:100/13
  |  
提交时间:2010/03/08
atomic force microscopy
field emission
hydrogen
II-VI semiconductors
plasma materials processing
sputter deposition
wide band gap semiconductors
work function
zinc compounds
Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals
期刊论文
journal of vacuum science & technology b, 2009, 卷号: 27, 期号: 3, 页码: 1093-1096
Wang HL
;
Xing MX
;
Ren G
;
Zheng WH
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  |  
浏览/下载:122/0
  |  
提交时间:2010/03/08
III-V semiconductors
indium compounds
photonic crystals
plasma materials processing
semiconductor lasers
sputter etching
Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films
期刊论文
applied surface science, 2009, 卷号: 255, 期号: 16, 页码: 7451-7454
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Wang GH
;
Zeng YP
;
Li JM
收藏
  |  
浏览/下载:334/72
  |  
提交时间:2010/03/08
Diluted magnetic semiconductors (DMSs)
Nonpolar a-plane GaN:Mn films
Ion implantation
Room-temperature ferromagnetic properties
In-plane magnetic anisotropy
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