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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Third-order optical nonlinearities of lead-free (na1-xkx)(0.5)bi0.5tio3 thin films 期刊论文 Optics communications, 2008, 卷号: 281, 期号: 3, 页码: 439-443 作者:  Zhang, Ting;  Zhang, Weifeng;  Chen, Yonghai;  Yin, Jiang 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Ferroelectric thin films  (na1-xkx)(0.5)bi0.5tio3  Z-scan technique  Nonlinear optical properties   Enhanced pockels effect in gan/alxga1-xn superlattice measured by polarization-maintaining fiber mach-zehnder interferometer 期刊论文 Applied physics letters, 2007, 卷号: 91, 期号: 3, 页码: 3 作者:  Chen, P.;  Tu, X. G.;  Li, S. P.;  Li, J. C.;  Lin, W. 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Luminescence properties of multi-layer ingan quantum dots grown on c- and r-plane sapphire substrates 期刊论文 Physica e-low-dimensional systems & nanostructures, 2005, 卷号: 27, 期号: 3, 页码: 314-318 作者:  Chen, Z;  Chua, SJ;  Han, PD;  Liu, XL;  Lu, DC 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Gan  Ingan  Quantum dots  Photoluminescence   Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates 期刊论文 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 27, 期号: 3, 页码: 314-318 Chen, Z; Chua, SJ; Han, PD; Liu, XL; Lu, DC; Zhu, QS; Wang, ZG; Tripathy, S 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/17 GaN   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane algan/gan heterostructures 期刊论文 Journal of crystal growth, 2004, 卷号: 268, 期号: 3-4, 页码: 504-508 作者:  Chen, Z;  Chua, SJ;  Yuan, HR;  Liu, XL;  Lu, DC 收藏  |  浏览/下载：10/0  |  提交时间：2019/05/12 Metalorganic chemical vapor deposition  Semiconducting iii-v materials   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 期刊论文 journal of crystal growth, 2004, 卷号: 268, 期号: 3-4, 页码: 504-508 Chen, Z; Chua, SJ; Yuan, HR; Liu, XL; Lu, DC; Han, PD; Wang, ZG 收藏  |  浏览/下载：269/35  |  提交时间：2010/03/09 metalorganic chemical vapor deposition   Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS   High-quality GaN grown by gas-source MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 characterization  molecular beam epitaxy  gallium compounds  nitrides  piezoelectric materials  semiconducting gallium compounds  MOLECULAR-BEAM EPITAXY  HETEROSTRUCTURES  SAPPHIRE  DIODES   High-quality GaN grown by gas-source MBE 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 386-389 Wang JX; Sun DZ; Wang XL; Li JM; Zeng YP; Hou X; Lin LY 收藏  |  浏览/下载：113/14  |  提交时间：2010/08/12 characterization  molecular beam epitaxy  gallium compounds  nitrides  piezoelectric materials  semiconducting gallium compounds  MOLECULAR-BEAM EPITAXY  HETEROSTRUCTURES  SAPPHIRE  DIODES