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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles 会议论文 2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008 Zhang, WC; Wu, NJ 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 TRANSISTORS  TECHNOLOGY  DEVICES   Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nanoelectronic devices 期刊论文 Physical review b, 2007, 卷号: 75, 期号: 7, 页码: 9 作者:  Li, Xin-Qi;  Yan, YiJing 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nanoelectronic devices 期刊论文 physical review b, 2007, 卷号: 75, 期号: 7, 页码: art.no.075114 Li, XQ (Li, Xin-Qi); Yan, YJ (Yan, YiJing) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 RESONANT-TUNNELING SYSTEMS   Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-si3n4 nanowires on si(100) substrate 期刊论文 Nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3989-3993 作者:  Wang, Xiaoxin;  Liu, Jifeng;  Cheng, Buwen;  Yu, Jinzhong;  Wang, Qiming 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Nanoelectronic devices-resonant tunnelling diodes grown on inp substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文 Chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Resonant tunnelling diode  Inp substrate  Molecular beam epitaxy  High resolution transmission electron microscope   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang Y 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope  CURRENT-VOLTAGE CHARACTERISTICS  INTRINSIC BISTABILITY  CIRCUIT   Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3989-3993 Wang XX (Wang Xiaoxin); Liu JF (Liu Jifeng); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 SILICON-NITRIDE NANOWIRES  ARRAYS  SI3N4  SI   Research progress of electronic properties of self-assembled semiconductor quantum dots 期刊论文 Acta metallurgica sinica, 2005, 卷号: 41, 期号: 5, 页码: 463-470 作者:  Sun, J;  Jin, P;  Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12 Self-assembled semiconductor quantum dot  Quantum size effect  Nanoelectronic device