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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文 physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850 Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J 收藏  |  浏览/下载：96/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文 physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155 作者:  Li JB 收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS   Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文 physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672 Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.) 收藏  |  浏览/下载：37/0  |  提交时间：2010/12/12 InGaN  Dislocation  Metalorganic chemical vapor deposition  High resolution X-ray diffraction  Cathodoluminescence  MISFIT DISLOCATIONS  QUANTUM-WELLS  BAND-GAP  EPILAYERS  GENERATION  ALLOYS  INN   High quality microcrystalline Si films by hydrogen dilution profile 期刊论文 thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455 Gu JH (Gu Jinhua); Zhu MF (Zhu Meifang); Wang LJ (Wang Liujiu); Liu FZ (Liu Fengzhen); Zhou BQ (Zhou Bingqing); Ding K (Ding Kun); Li GH (Li Guohua) 收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11 microcrystalline Si thin film  hydrogen dilution profiling  incubation layer  uniformity  CHEMICAL-VAPOR-DEPOSITION  THIN  ALLOYS  CVD   TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy 期刊论文 defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65 作者:  Han PD 收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12 HREM  large-angle stereo-projection  misfit dislocations  stacking faults  TEM  LAYER  SUPERLATTICES  ELECTRON-MICROSCOPY   Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers 期刊论文 applied physics letters, 1999, 卷号: 74, 期号: 25, 页码: 3773-3775 Xu J; He ZH; Chen KJ; Huang XF; Feng DA; Han HX; Wang ZP; Li GH 收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12 QUANTUM-CONFINEMENT  PHOTOLUMINESCENCE  SUPERLATTICES  NANOCRYSTALS  CRYSTALLITES  FILMS   Dependence of photoluminescence induced by carbon contamination on GeSi structure 期刊论文 journal of crystal growth, 1998, 卷号: 187, 期号: 2, 页码: 197-202 Guo LW; Shi JJ; Cheng WQ; Li YK; Huang Q; Zhou JM 收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12 SILICON  GROWTH  SUPERLATTICES