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Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文
international journal of thermophysics, 2015, 卷号: 36, 页码: 980–986
Yan Liu; Jing Yan; Hongjuan Wang; Buwen Cheng; Genquan Han
收藏  |  浏览/下载：24/0  |  提交时间：2016/03/22
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
thin solid films, 2014, 卷号: 564, 页码: 135-139
He, XG; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Le, LC; Yang, J; Li, XJ; Zhang, SM; Zhu, JJ; Wang, H; Yang, H
收藏  |  浏览/下载：32/0  |  提交时间：2015/03/25
Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文
semiconductor science and technology, 2014, 卷号: 29, 期号: 11, 页码: 115027
Liu, Yan; Yan, Jing; Liu, Mingshan; Wang, Hongjuan; Zhang, Qingfang; Zhao, Bin; Zhang, Chunfu; Cheng, Buwen; Hao, Yue; Han, Genquan
收藏  |  浏览/下载：20/0  |  提交时间：2015/03/19
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文
international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151
Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming
收藏  |  浏览/下载：31/0  |  提交时间：2013/05/07
Growth of 2 mu m crack-free gan on si(111) substrates by metal organic chemical vapor deposition 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: 4
作者:  Wei Meng;  Wang Xiao-Liang;  Xiao Hong-Ling;  Wang Cui-Mei;  Pan Xu
收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：85/7  |  提交时间：2011/07/05
Effective recombination velocity of textured surfaces 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui)
收藏  |  浏览/下载：120/3  |  提交时间：2010/06/04
Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations 期刊论文
Journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: 4
作者:  Gai, Yanqin;  Li, Jingbo;  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
Thickness dependent dislocation, electrical and optical properties in inn films grown by mocvd 期刊论文
Acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Zhang Zeng;  Zhang Rong;  Xie Zi-Li;  Liu Bin;  Xiu Xiang-Qian
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12

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