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科研机构
半导体研究所 [28]
内容类型
期刊论文 [23]
会议论文 [5]
发表日期
2015 [1]
2007 [1]
2006 [3]
2005 [1]
2003 [4]
2002 [2]
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学科主题
半导体物理 [11]
半导体材料 [5]
光电子学 [2]
半导体化学 [1]
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Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors
期刊论文
scientific reports, 2015, 卷号: 5, 页码: 8130
Yufei Cao
;
Kaiming Cai
;
Pingan Hu
;
Lixia Zhao
;
Tengfei Yan
;
Wengang Luo
;
Xinhui Zhang
;
Xiaoguang Wu
;
Kaiyou Wang
;
Houzhi Zheng
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2016/04/08
Ordered InAs quantum dots with controllable periods grown on stripe-patterned GaAs substrates
期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 9, 页码: 2689-2691
Ren, YY (Ren Yun-Yun)
;
Xu, B (Xu Bo)
;
Wang, ZG (Wang Zhan-Guo)
;
Liu-Ming (Liu-Ming)
;
Long, SB (Long Shi-Bing)
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2010/03/29
GE ISLANDS
Time-resolved photoluminescence spectra of self-assembled inas/gaas quantum dots
期刊论文
Thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
作者:
Kong, LM
;
Cai, JF
;
Wu, ZY
;
Gong, Z
;
Niu, ZC
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Time-resolved photoluminescence
Inas self-assembled qds
Migration of carriers
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
期刊论文
thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/04/11
time-resolved photoluminescence
InAs self-assembled QDs
migration of carriers
1.3 MU-M
DEPENDENT RADIATIVE DECAY
THERMAL REDISTRIBUTION
EXCITONS
RECOMBINATION
RELAXATION
LIFETIMES
EMISSION
EPITAXY
LASERS
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
会议论文
3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
收藏
  |  
浏览/下载:166/29
  |  
提交时间:2010/03/29
time-resolved photoluminescence
Compact polarization-insensitive arrayed waveguide grating based on SOI material
会议论文
conference on optoelectronic devices and integration, beijing, peoples r china, nov 08-11, 2004
Fang, Q
;
Li, F
;
Liu, YL
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  |  
浏览/下载:261/72
  |  
提交时间:2010/03/29
arrayed waveguide grating
compact
polarization-insensitive
silicon on insulator
SILICON-ON-INSULATOR
WAVELENGTH DEMULTIPLEXER
MULTIPLEXER
INP
SI
Influences of reactor pressure of gan buffer layers on morphological evolution of gan grown by mocvd
期刊论文
Journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:
Chen, J
;
Zhang, SM
;
Zhang, BS
;
Zhu, JJ
;
Shen, XM
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
In situ laser reflectometry
Lateral overgrowths
Surface morphology
Metalorganic chemical vapor deposition
Gan
Effects of reactor pressure on gan nucleation layers and subsequent gan epilayers grown on sapphire substrate
期刊论文
Journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:
Chen, J
;
Zhang, SM
;
Zhang, BS
;
Zhu, JJ
;
Feng, G
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
In situ laser reflectometry
Lateral overgrowth
Metalorganic chemical vapor deposition
Gan
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:
Zhang SM
收藏
  |  
浏览/下载:230/30
  |  
提交时间:2010/08/12
in situ laser reflectometry
lateral overgrowth
metalorganic chemical vapor deposition
GaN
CHEMICAL-VAPOR-DEPOSITION
HIGH-QUALITY GAN
BUFFER LAYER
THREADING DISLOCATIONS
TEMPERATURE
EVOLUTION
SURFACE
MOVPE
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:
Zhang SM
收藏
  |  
浏览/下载:292/3
  |  
提交时间:2010/08/12
in situ laser reflectometry
lateral overgrowths
surface morphology
metalorganic chemical vapor deposition
GaN
CHEMICAL-VAPOR-DEPOSITION
LIGHT-EMITTING-DIODES
SAPPHIRE SUBSTRATE
NUCLEATION LAYERS
QUALITY
TEMPERATURE
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