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科研机构
半导体研究所 [26]
内容类型
期刊论文 [24]
会议论文 [2]
发表日期
2012 [1]
2011 [4]
2010 [2]
2009 [6]
2008 [2]
2006 [1]
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学科主题
半导体物理 [11]
半导体材料 [5]
光电子学 [2]
半导体化学 [1]
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浏览/检索结果:
共26条,第1-10条
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Influence of indium cluster on the high and constant background electron density in ternary InxGa1-xN alloys
期刊论文
li c (li, chong); wu fm (wu, fengmin); li ss (li, shu-shen); xia jb (xia, jian-bai); li jb (li, jingbo), 2012, 卷号: 101, 期号: 6, 页码: 062102
Li C (Li, Chong)
;
Wu FM (Wu, Fengmin)
;
Li SS (Li, Shu-Shen)
;
Xia JB (Xia, Jian-Bai)
;
Li JB (Li, Jingbo)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2013/04/02
The explanation of inn bandgap discrepancy based on experiments and first-principle calculations
期刊论文
Physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Liu, Chaoren
;
Li, Jingbo
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
First principle calculation
Indium nitride
Band gap
Defect
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
;
Song, Guofeng
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Room-Temperature Ferromagnetism in Co-Doped In2O3 Nanocrystals
期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 41, 页码: 17569-17573
Meng XQ (Meng Xiuqing)
;
Tang LM (Tang Liming)
;
Li JB (Li Jingbo)
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  |  
浏览/下载:52/0
  |  
提交时间:2010/11/02
THIN-FILMS
QUANTUM DOTS
AB-INITIO
INDIUM
ZNO
SEMICONDUCTORS
ACTIVATION
OXIDATION
ELECTRON
ENERGY
Donor-donor binding in In2O3: Engineering shallow donor levels
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming)
;
Wang LL (Wang Ling-Ling)
;
Wang D (Wang Dan)
;
Liu JZ (Liu Jian-Zhe)
;
Chen KQ (Chen Ke-Qiu)
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2010/05/24
AUGMENTED-WAVE METHOD
ELECTRONIC-STRUCTURE
SEMICONDUCTORS
FILMS
ZNSE
ZNTE
The application of sns nanoparticles to bulk heterojunction solar cells
期刊论文
Journal of alloys and compounds, 2009, 卷号: 482, 期号: 1-2, 页码: 203-207
作者:
Wang, Zhijie
;
Qu, Shengchun
;
Zeng, Xiangbo
;
Liu, Junpeng
;
Zhang, Changsha
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/05/12
Nanostructures
Sns
Polymers
Solar cells
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104
作者:
Zhu JJ
;
Zhang SM
;
Jiang DS
;
Zhao DG
;
Yang H
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  |  
浏览/下载:191/56
  |  
提交时间:2010/03/08
aluminium compounds
claddings
gallium compounds
III-V semiconductors
indium compounds
quantum well lasers
refractive index
waveguide lasers
The application of SnS nanoparticles to bulk heterojunction solar cells
期刊论文
journal of alloys and compounds, 2009, 卷号: 482, 期号: 1-2, 页码: 203-207
作者:
Tan FR
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  |  
浏览/下载:65/2
  |  
提交时间:2010/03/08
Nanostructures
SnS
Polymers
Solar cells
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