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The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes 期刊论文
APPLIED SURFACE SCIENCE, 2021, 卷号: 570, 页码: 151132
作者:  Wang, Xiao-Wei;   Liang, Feng;   Zhao, De-Gang;   Chen, Ping;   Liu, Zong-Shun;   Yang, Jing
收藏  |  浏览/下载：16/0  |  提交时间：2022/03/23
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment 期刊论文
RESULTS IN PHYSICS, 2021, 卷号: 31, 页码: 105057
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Liu, Zongshun;   Chen, Ping;   Yang, Jing
收藏  |  浏览/下载：13/0  |  提交时间：2022/03/23
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 874, 页码: 159851
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun
收藏  |  浏览/下载：27/0  |  提交时间：2022/03/28
Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 822, 页码: 153571
作者:  J. Yang ;  D.G. Zhao;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang;   S.T. Liu;   Y. Xing
收藏  |  浏览/下载：25/0  |  提交时间：2021/06/17
Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1345-1350
作者:  Lei Wang ;   Ningyang Liu;   Bo Li ;   Huiping Zhu;   Xiaoting Shan;   Qingxi Yuan;   Xuewen Zhang;   Zheng Gong;   Fazhan Zhao ;   Naixin Liu;   Mengxin Liu;   Binhong Li;   Jiantou Gao;   Yang Huang ;   Jianqun Yang;   Xingji Li;   Jiajun Luo;   Zhengsheng Han, and Xinyu
收藏  |  浏览/下载：23/0  |  提交时间：2021/06/28
Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 3, 页码: 034206
作者:  Ping Chen ;   De-Gang Zhao ;   De-Sheng Jiang ;   Jing Yang ;   Jian-Jun Zhu ;   Zong-Shun Liu ;   Wei Liu ;   Feng Liang ;   Shuang-Tao Liu ;   Yao Xing ;   Li-Qun Zhang
收藏  |  浏览/下载：29/0  |  提交时间：2021/12/20
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness 期刊论文
Nanoscale Research Letters, 2020, 卷号: 15, 期号: 1, 页码: 191
作者:  Xiaowei Wang;  Feng Liang;  Degang Zhao;  Zongshun Liu;  Jianjun Zhu ;  Jing Yang
收藏  |  浏览/下载：21/0  |  提交时间：2021/05/24
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature 期刊论文
ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 13, 页码: 1903400
作者:  Xingchen Liu;   Ning Tang;   Shixiong Zhang;   Xiaoyue Zhang;   Hongming Guan;   Yunfan Zhang;   Xuan Qian;   Yang Ji;   Weikun Ge;   Bo Shen
收藏  |  浏览/下载：28/0  |  提交时间：2021/06/17
Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2020, 卷号: 49, 期号: 6, 页码: 3877-3882
作者:  Wei Liu;   Feng Liang;   Degang Zhao;   Jing Yang;   Desheng Jiang;   Jianjun Zhu ;   Zongshun Liu
收藏  |  浏览/下载：13/0  |  提交时间：2021/06/28
Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment 期刊论文
APPLIED SURFACE SCIENCE, 2020, 卷号: 505, 页码: 144283
作者:  Liyuan Peng ;   Degang Zhao;   Jianjun Zhu ;   Wenjie Wang;   Feng Liang;   Desheng Jiang ;  Zongshun Liu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang
收藏  |  浏览/下载：12/0  |  提交时间：2021/12/17

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