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CORC

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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Li JB
收藏  |  浏览/下载：63/1  |  提交时间：2010/04/22
Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition 期刊论文
surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456
作者:  Tan HR;  Zhang XW;  You JB;  Fan YM
收藏  |  浏览/下载：264/33  |  提交时间：2010/03/08
Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd 期刊论文
Microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
作者:  Luo, Weijun;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimie;  Ran, Junxue
收藏  |  浏览/下载：43/0  |  提交时间：2019/05/12
The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd 期刊论文
Superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
作者:  Luo, Weijun;  Wang, Xiaoliang;  Guo, Lunchun;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08
High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A
收藏  |  浏览/下载：74/0  |  提交时间：2010/03/08
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM
收藏  |  浏览/下载：85/1  |  提交时间：2010/03/08
Influence of aln thickness on strain evolution of gan layer grown on high-temperature aln interlayer 期刊论文
Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
作者:  Liu, W.;  Wang, J. F.;  Zhu, J. J.;  Jiang, D. S.;  Yang, H.
收藏  |  浏览/下载：8/0  |  提交时间：2019/05/12

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