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Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 750, 页码: 182-188
作者:  Kai Yu ;   Fan Yang ;   Hui Cong ;   Lin Zhou ;   Qingyun Liu ;   Lichun Zhang ;   Buwen Cheng ;   Chunlai Xue ;   Yuhua Zuo ;   Chuanbo Li
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/19
Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文
international journal of thermophysics, 2015, 卷号: 36, 页码: 980–986
Yan Liu; Jing Yan; Hongjuan Wang; Buwen Cheng; Genquan Han
收藏  |  浏览/下载：24/0  |  提交时间：2016/03/22
High hole mobility GeSn on insulator formed by self-organized seeding lateral growth 期刊论文
journal of physics d: applied physics, 2015, 卷号: 48, 页码: 445103
Zhi Liu; Juanjuan Wen; Xu Zhang; Chuanbo Li; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang
收藏  |  浏览/下载：20/0  |  提交时间：2016/02/16
Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy 期刊论文
applied physics letters, 2014, 卷号: 104, 期号: 5, 页码: 052111
Wang, J; Xing, JL; Xiang, W; Wang, GW; Xu, YQ; Ren, ZW; Niu, ZC
收藏  |  浏览/下载：24/0  |  提交时间：2015/03/19
Native p-type transparent conductive cui via intrinsic defects 期刊论文
Journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 5
作者:  Wang, Jing;  Li, Jingbo;  Li, Shu-Shen
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H
收藏  |  浏览/下载：49/3  |  提交时间：2011/07/05
Resonant subband Landau level coupling in symmetric quantum well 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.)
收藏  |  浏览/下载：29/0  |  提交时间：2010/12/05
Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations 期刊论文
Journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: 4
作者:  Gai, Yanqin;  Li, Jingbo;  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:  Li JB;  Hou QF
收藏  |  浏览/下载：66/11  |  提交时间：2010/03/08

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