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Characteristics of high al content algan grown by pulsed atomic layer epitaxy 期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载：173/0  |  提交时间：2019/05/12
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 5, 页码: art. no. 052101
作者:  Wei HY;  Jiao CM;  Song HP
收藏  |  浏览/下载：236/41  |  提交时间：2010/03/08
Spin dynamics of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system 期刊论文
physical review b, 2009, 卷号: 80, 期号: 19, 页码: art.no.193301
Luo HH (Luo Haihui); Qian X (Qian Xuan); Ruan XZ (Ruan Xuezhong); Ji Y (Ji Yang); Umansky V (Umansky Vladimir)
收藏  |  浏览/下载：262/47  |  提交时间：2010/03/08
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:  Qian X
收藏  |  浏览/下载：81/7  |  提交时间：2010/03/08
The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd 期刊论文
Superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
作者:  Luo, Weijun;  Wang, Xiaoliang;  Guo, Lunchun;  Xiao, Hongling
收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08

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