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Fabrication of two-dimensional Ta2O5 photonic crystal slabs with ultra-low background emission toward highly sensitive fluorescence spectroscopy 期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1422-1428
Kaji T; Yamada T; Ueda R; Xu XS; Otomo A
收藏  |  浏览/下载:61/6  |  提交时间:2011/07/05
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载:125/5  |  提交时间:2010/04/22
Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672
Liu, HB; Zhao, LJ; Pan, JQ; Zhu, HL; Zhou, F; Wang, BJ; Wang, W
收藏  |  浏览/下载:19/0  |  提交时间:2010/03/08
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:35/0  |  提交时间:2010/04/11
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.)
收藏  |  浏览/下载:39/0  |  提交时间:2010/04/11
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ
收藏  |  浏览/下载:81/0  |  提交时间:2010/04/11
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载:48/0  |  提交时间:2010/04/11
Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 8, 页码: art.no.081902
Yang T (Yang Tao); Tatebayashi J (Tatebayashi Jun); Nishioka M (Nishioka Masao); Arakawa Y (Arakawa Yasuhiko)
收藏  |  浏览/下载:44/0  |  提交时间:2010/04/11
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Zhang YH;  Jiang DS
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063
Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC
收藏  |  浏览/下载:64/0  |  提交时间:2010/08/12


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