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科研机构
半导体研究所 [80]
内容类型
期刊论文 [77]
会议论文 [3]
发表日期
2013 [1]
2011 [7]
2010 [10]
2009 [22]
2008 [8]
2007 [1]
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半导体材料 [24]
半导体物理 [17]
光电子学 [2]
半导体化学 [1]
半导体器件 [1]
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19μm quantum cascade infrared photodetectors
期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 191120 - 191120-4
作者:
Zhai, Shen-Qiang
;
Liu, Jun-Qi
;
Wang, Xue-Jiao
;
Zhuo, Ning
;
Liu, Feng-Qi
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2014/02/12
Aluminium Compounds
Gallium Compounds
Iii-v Semiconductors
Indium Compounds
Infrared Detectors
Leakage Currents
Photodetectors
Photodetectors
Bolometers
Infrared Submillimeter Wave microWave And radioWave Receivers And Detectors
Spatial hole burning degradation of algaas/gaas laser diodes
期刊论文
Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3
作者:
Qiao, Y. B.
;
Feng, S. W.
;
Xiong, C.
;
Wang, X. W.
;
Ma, X. Y.
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/05/12
Aluminium compounds
Carrier density
Cathodoluminescence
Gallium arsenide
Iii-v semiconductors
Optical hole burning
Optical microscopy
Quantum well lasers
Semiconductor epitaxial layers
X-ray diffraction
Metal electrode influence on the wet selective etching of gaas/algaas
期刊论文
Journal of vacuum science & technology b, 2011, 卷号: 29, 期号: 4, 页码: 4
作者:
Wang Jie
;
Han Qin
;
Yang Xiao-Hong
;
Wang Xiu-Ping
;
Ni Hai-Qiao
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  |  
浏览/下载:120/0
  |  
提交时间:2019/05/12
Aluminium compounds
Chromium alloys
Copper alloys
Electrochemical analysis
Electrochemical electrodes
Etching
Gallium arsenide
Gold alloys
Iii-v semiconductors
Metallic thin films
Titanium alloys
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Influence of window layer thickness on double layer antireflection coating for triple junction solar cells
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 66001
Wang, Lijuan
;
Zhan, Feng
;
Yu, Ying
;
Zhu, Yan
;
Liu, Shaoqing
;
Huang, Shesong
;
Ni, Haiqiao
;
Niu, Zhichuan
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  |  
浏览/下载:21/0
  |  
提交时间:2012/06/14
Antireflection coatings
Coatings
Gallium
Optimization
Silicon compounds
Titanium dioxide
Transfer matrix method
Zinc sulfide
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
;
Song, Guofeng
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
materials science in semiconductor processing, 2011
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
;
Zeng, Yiping
;
Xu, Shu
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure
期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 6, 页码: 3
作者:
Zhang, L.
;
Ding, K.
;
Yan, J. C.
;
Wang, J. X.
;
Zeng, Y. P.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Aluminium compounds
Electron gas
Gallium compounds
Iii-v semiconductors
Mocvd
Polarisation
Semiconductor doping
Semiconductor thin films
Wide band gap semiconductors
Co doping enhanced giant magnetocaloric effect in mn1-xcoxas films epitaxied on gaas (001)
期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3
作者:
Xu, P. F.
;
Nie, S. H.
;
Meng, K. K.
;
Wang, S. L.
;
Chen, L.
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/05/12
Cobalt compounds
Doping
Entropy
Gallium arsenide
Magnetic epitaxial layers
Magnetocaloric effects
Manganese compounds
Molecular beam epitaxial growth
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