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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507
Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG
收藏  |  浏览/下载：18/0  |  提交时间：2015/03/19
Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979
Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo
收藏  |  浏览/下载：13/0  |  提交时间：2013/05/07
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501
Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/27
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 054513
Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：14/0  |  提交时间：2013/04/02
Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.84
Han LF; Zhu YG; Zhang XH; Tan PH; Ni HQ; Niu ZC
收藏  |  浏览/下载：46/2  |  提交时间：2011/07/05
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys 期刊论文
solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650
Su SJ; Wang W; Cheng BW; Hu WX; Zhang GZ; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：65/3  |  提交时间：2011/07/05
Temperature and electron density dependence of spin relaxation in gaas/algaas quantum well 期刊论文
Nanoscale research letters, 2011, 卷号: 6, 页码: 5
作者:  Han, Lifen;  Zhu, Yonggang;  Zhang, Xinhui;  Tan, Pingheng;  Ni, Haiqiao
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Temperature dependence of hole spin relaxation in ultrathin inas monolayers 期刊论文
Physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 5, 页码: 1597-1600
作者:  Li, T.;  Zhang, X. H.;  Zhu, Y. G.;  Huang, X.;  Han, L. F.
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：50/5  |  提交时间：2011/07/05

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