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Compact Modeling of Fin-Width Roughness Induced FinFET Device Variability Using the Perturbation Method (CPCI-S收录) 会议论文
DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VII
作者:  Cheng, Qi[1];  Kang, Weiling[1];  Chen, Yijian[1]
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/15
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity (CPCI-S收录) 会议论文
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
作者:  Xu, Jiaojiao[2,3];  Ma, Chenyue[3];  Zhang, Chenfei[3];  Zhang, Xiufang[3];  Wu, Wen[1]
收藏  |  浏览/下载:7/0  |  提交时间:2019/04/15
A Generalized Model to Predict Fin-Width Roughness Induced FinFET Device Variability Using the Boundary Perturbation Method (CPCI-S收录) 会议论文
DESIGN-PROCESS-TECHNOLOGY CO-OPTIMIZATION FOR MANUFACTURABILITY VIII
作者:  Cheng, Qi[1];  You, Jun[1];  Chen, Yijian[1]
收藏  |  浏览/下载:3/0  |  提交时间:2019/04/12


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