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Wavelength extended 2.4 mu m heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2008, 卷号: 51, 期号: 4, 页码: 316-321
Zhang, YG(张永刚); Gu, Y; Tian, ZB; Li, AZ; Zhu, XR; Zheng, YL
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