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CORC

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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:  Cui, X (Cui, Xu) [1] , [2] , [3];  Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3];  Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3];  Wei, Y (Wei, Ying) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏  |  浏览/下载：18/0  |  提交时间：2022/06/21
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1
收藏  |  浏览/下载：40/0  |  提交时间：2021/08/06
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1
收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
作者:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui)
收藏  |  浏览/下载：38/0  |  提交时间：2018/06/20
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang)
收藏  |  浏览/下载：39/0  |  提交时间：2017/12/05
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
作者:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi)
收藏  |  浏览/下载：28/0  |  提交时间：2016/12/12
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
作者:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)
收藏  |  浏览/下载：24/0  |  提交时间：2018/01/26
Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199
作者:  Wang, B (Wang Bo);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Liu, CJ (Liu Chang-Ju);  Wen, L (Wen Lin)
收藏  |  浏览/下载：24/0  |  提交时间：2018/01/26
Research on dark signal degradation in Co-60 gamma-ray-irradiated CMOS active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 5
作者:  Wang Bo;  Li Yu-Dong;  Guo Qi;  Liu Chang-Ju;  Wen Lin
收藏  |  浏览/下载：17/0  |  提交时间：2014/11/11
research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 10, 页码: -
作者:  Li Ming;  Yu Xue-Feng;  Xue Yao-Guo;  Lu Jian;  Cui Jiang-Wei
收藏  |  浏览/下载：22/0  |  提交时间：2012/11/29

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