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新疆理化技术研究所 [49]
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期刊论文 [35]
学位论文 [14]
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2022 [1]
2021 [1]
2020 [1]
2018 [5]
2017 [2]
2016 [6]
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Physics [6]
Engineerin... [3]
Nuclear Sc... [2]
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Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127
作者:
Yang, ZK (Yang, Zhikang) [1] , [2]
;
Wen, L (Wen, Lin) [1]
;
Li, YD (Li, Yudong) [1]
;
Liu, BK (Liu, Bingkai) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2]
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2022/06/21
Color CMOS Image Sensor
Radiation Damage
Total Ionizing Dose Effects
Bias Condition
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:
Zhang, JX (Zhang, Jin-Xin)[ 1 ]
;
Guo, HX (Guo, Hong-Xia)[ 2,3 ]
;
Pan, XY (Pan, Xiao-Yu)[ 3 ]
;
Guo, Q (Guo, Qi)[ 2 ]
;
Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/11/20
Sige Hbt
Synergistic Effect
Single Event Effects
Total Ionizing Dose
Total ionizing dose and synergistic effects of magnetoresistive random-access memory
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5
作者:
Zhang, XY (Zhang, Xing-Yao)
;
Guo, Q (Guo, Qi)
;
Li, YD (Li, Yu-Dong)
;
Wen, L (Wen, Lin)
;
Zhang, XY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2018/08/07
Magnetoresistive Random-access Memory Total Ionizing Dose
Synergistic Effect
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
作者:
Ma, LD (Ma, Lin-Dong)[ 1,2,3 ]
;
Li, YD (Li, Yu-Dong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2018/11/20
Cmos Active Pixel Sensor
Dark Current
Quantum Efficiency
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
作者:
Li, XL (Li, Xiao-Long)
;
Lu, W (Lu, Wu)
;
Wang, X (Wang, Xin)
;
Yu, X (Yu, Xin)
;
Guo, Q (Guo, Qi)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2018/05/14
Ionizing Radiation Damage
Enhanced Low Dose Rate Sensitivity (Eldrs)
Switched Temperature Irradiation
Gate-controlled Lateral Pnp Transistor (glPnp)
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
作者:
Ma, T (Ma, Teng)
;
Yu, XF (Yu, Xuefeng)
;
Cui, JW (Cui, Jiangwei)
;
Zheng, QW (Zheng, Qiwen)
;
Zhou, H (Zhou, Hang)
收藏
  |  
浏览/下载:57/0
  |  
提交时间:2018/03/14
Reliability
Proton Irradiation
Radiation Induced Leakage Current (Rilc)
Time-dependent Dielectric Breakdown (Tddb)
Total Ionizing Does (Tid)
An investigation of ionizing radiation damage in different SiGe processes
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
作者:
Li, P (Li, Pei)
;
Liu, MH (Liu, Mo-Han)
;
He, CH (He, Chao-Hui)
;
Guo, HX (Guo, Hong-Xia)
;
Zhang, JX (Zhang, Jin-Xin)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/12/11
Different Silicon-germanium Process
Ionizing Radiation Damage
Numerical Simulation
Characteristics of p-i-n diodes basing on displacement damage detector
期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2017, 卷号: 139, 期号: 10, 页码: 11-16
作者:
Sun, J (Sun Jing)[ 1,2 ]
;
Guo, Q (Guo Qi)[ 1 ]
;
Yu, X (Yu Xin)[ 1,2 ]
;
He, CF (He Cheng-Fa)[ 1 ]
;
Shi, WL (Shi Wei-Lei)[ 1 ]
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/07/10
Displacement damage
NIEL
P-i-n photodiode
Damage enhancement factor
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