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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Size effects of AlGaInP red vertical micro-LEDs on silicon substrate 期刊论文 Results in Physics, 2022, 卷号: 36, 页码: 6 作者:  K. L. Fan;  J. Tao;  Y. Z. Zhao;  P. Y. Li;  W. C. Sun 收藏  |  浏览/下载：2/0  |  提交时间：2023/06/14 Spectrally Stable Blue Light-Emitting Diodes Based on All-Inorganic Halide Perovskite Films 期刊论文 Nanomaterials, 2022, 卷号: 12, 期号: 17, 页码: 11 作者:  H. D. Zhang;  Y. Su;  X. L. Xue;  Q. H. Zeng;  Y. F. Sun 收藏  |  浏览/下载：4/0  |  提交时间：2023/06/14 Deconvoluting the energy transport mechanisms in all-inorganic CsPb2Br5/CsPbBr3 perovskite composite systems 期刊论文 Apl Materials, 2022, 卷号: 10, 期号: 3, 页码: 10 作者:  Y. P. Wang;  F. Wang;  G. B. Zhu;  Q. Quan;  Z. X. Lai 收藏  |  浏览/下载：7/0  |  提交时间：2023/06/14 Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures 期刊论文 Journal of Materials Science, 2021, 卷号: 56, 期号: 2, 页码: 1481-1491 作者:  M. Tian;  C. Ma;  T. Lin;  J. Liu;  D. N. Talwar 收藏  |  浏览/下载：7/0  |  提交时间：2022/06/13 Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN 期刊论文 Applied Surface Science, 2020, 卷号: 520, 页码: 9 作者:  K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li 收藏  |  浏览/下载：2/0  |  提交时间：2021/07/06 Development of structure and tuning ability of the luminescence of lead-free halide perovskite nanocrystals (NCs) 期刊论文 Chemical Engineering Journal, 2020 作者:  S. A. Khan,C. Li,A. Jalil,X. Xin,M. Rauf,J. Ahmed,M. A. M. Khan,B. Dong,J. Zhu and S. Agathopoulos 收藏  |  浏览/下载：4/0  |  提交时间：2021/07/06 Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文 Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6 作者:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li 收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06 The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.   Preparation, characterization and optical properties of carbon doped ZnO nanocrystal (EI CONFERENCE) 会议论文 ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China Wang Z.; Li S.; Lu Y.; Zhao D.; Liu J.; Wang L.; Zhang J.; Gao Y.; Wang Z. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 In this paper  we prepared carbon doped nanocrystalline ZnO by pyrolyzed zinc stearate at 250C and 300C respectively. The XRD curves indicate the sample has polycrystalline hexagonal wurtzite structure. The XRD data of the sample prepared at 250C and 300C has a bigger angle shift about 0.05and 0.3respectively. That indicate the structure of the sample has some changes. The EDS indicate the sample contains Zn  O and C. So the XRD shift may attribute to the C. The XPS indicate the C doped in the crystal lattice of ZnO of the sample prepared at 300C  and the sample prepared at 250C may be only a few of C doped in the crystal lattice of ZnO. The PL of the sample prepared at 300C only has a weak ultraviolet emission  which indicates C modified the nanocrystalline ZnO surface as a non-radiative recombination center. In this process C could non-radiatively recombine the carries on the nanocrystallin ZnO surface. The sample prepared at 250C has a strong visible emission at about 530 nm. This emission band could be attributed to oxygen vacancy because C schlepped some oxygen on the nanocrystalline ZnO surface.