CORC

在结果中检索

CORC

浏览/检索结果: 共26条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018
作者:  Zhang, Baoshun(张宝顺);  Fan, Yaming(范亚明);  Hao, Ronghui(郝荣晖);  Yu, Guohao(于国浩);  Zhao, Jie
收藏  |  浏览/下载：47/0  |  提交时间：2019/03/27
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 期号: 12
作者:  Huang, Sen;  Liu, Xinyu;  Wang, Xinhua;  Kang, Xuanwu;  Zhang, Jinhan
收藏  |  浏览/下载：75/0  |  提交时间：2017/03/11
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 2
作者:  Shi, YJ;  Huang, S;  Bao, QL;  Wang, XH;  Wei, K
收藏  |  浏览/下载：43/0  |  提交时间：2017/03/11
A low-cost and low-temperature processable zinc oxide-polyethylenimine (ZnO:PEI) nano-composite as cathode buffer layer for organic and perovskite solar cells 期刊论文
ORGANIC ELECTRONICS, 2016, 卷号: 38
作者:  Jia, XR(贾晓瑞);  Wu, N;  Wei, JF(魏俊峰);  Zhang, LP(张连萍);  Luo, Q(骆群)
收藏  |  浏览/下载：40/0  |  提交时间：2017/03/11
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 108, 期号: 1
作者:  Sun, SC;  Fu, K(付凯);  Yu, GH(于国浩);  Zhang, ZL;  Song, L
收藏  |  浏览/下载：40/0  |  提交时间：2017/03/11
Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors 期刊论文
SMALL, 2016, 卷号: 12, 期号: 36
作者:  Zhang, X(张祥);  Zhao, JW(赵建文);  Dou, JY(窦军彦);  Tange, M;  Xu, WW(许威威)
收藏  |  浏览/下载：30/0  |  提交时间：2017/03/11
Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid 期刊论文
APPLIED PHYSICS EXPRESS, 2016, 卷号: 9, 期号: 8
作者:  Zhang, ZL(张志利);  Qin, SJ(秦双娇);  Fu, K(付凯);  Yu, GH(于国浩);  Li, WY
收藏  |  浏览/下载：97/0  |  提交时间：2017/03/11
Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 1
作者:  Wang, K;  Xing, YH;  Han, J;  Zhao, KK;  Guo, LJ
收藏  |  浏览/下载：52/0  |  提交时间：2017/03/11
Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers 期刊论文
DIAMOND AND RELATED MATERIALS, 2016, 卷号: 69
作者:  Wang, W;  Fu, K(付凯);  Hu, C;  Li, FN;  Liu, ZC
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/11
Metal coordination polymer derived mesoporous Co3O4 nanorods with uniform TiO2 coating as advanced anodes for lithium ion batteries 期刊论文
NANOSCALE, 2016, 卷号: 8, 期号: 5
作者:  Geng, HB;  Ang, HX;  Ding, XG(丁显光);  Tan, HT;  Guo, GL
收藏  |  浏览/下载：38/0  |  提交时间：2017/03/11

©版权所有 ©2017 CSpace - Powered by CSpace