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科研机构
北京航空航天大学 [11]
内容类型
会议论文 [7]
期刊论文 [4]
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2018 [1]
2017 [3]
2016 [4]
2015 [3]
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专题:北京航空航天大学
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Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene
会议论文
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
作者:
Zheng, X.
;
Zhang, M.
;
Shi, X.
;
Wang, G.
;
Zheng, L.
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/30
Capacitance
Diffusion barriers
Germanium
Germanium oxides
Graphene
High-k dielectric
Manufacture
Metals
MOS devices
Nanoelectronics
Oxide semiconductors
Dielectric layer
Diffusion barrier layers
Equivalent oxide thickness
Interface engineering
Interfacial oxides
Low-power logic
Metal oxide semiconductor
Voltage hysteresis
Graphene devices
Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2017, 卷号: 64, 页码: 847-857
作者:
Cai, Hao
;
Wang, You
;
De Barros, Lirida Alves
;
Zhao, Weisheng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Non-volatile logic-in-memory (NV-LIM)
MTJ
ultra-low power
approximate computing
FD-SOI
High Speed Low Power All Spin Logic Devices Assisted by Negative Capacitance Amplified Voltage Controlled Magnetic Anisotropy Effect
会议论文
2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017-01-01
作者:
Gao, Tianqi
;
Zeng, Lang
;
Zhang, Deming
;
Qin, Xiaowan
;
Long, Mingzhi
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/30
all spin logic device
voltage controlled magnetic anisotropy
negative capacitance
High speed low power all spin logic devices assisted by negative capacitance amplified voltage controlled magnetic anisotropy effect
会议论文
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, Kamakura, Japan, 2017-09-07
作者:
Gao, Tianqi
;
Zeng, Lang
;
Zhang, Deming
;
Qin, Xiaowan
;
Long, Mingzhi
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Ultra-Low Power All Spin Logic Device Acceleration based on Voltage Controlled Magnetic Anisotropy
会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:
Zhang, Zhizhong
;
Zhang, Yue
;
Yue, Lei
;
Su, Li
;
Shi, Yichuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
all spin logic
spin current
voltage controlled magnetic anisotropy
acceleration
Low Power All Spin Logic Device with Voltage Controlled Magnetic Anisotropy
会议论文
2016 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC), 2016-01-01
作者:
Gao, Tianqi
;
Zeng, Lang
;
Zhang, Deming
;
Gong, Fanghui
;
Qin, Xiaowan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
High-Speed, Low-Power, and Error-Free Asynchronous Write Circuit for STT-MRAM and Logic
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2016, 卷号: 52
作者:
Zhang, Deming
;
Zeng, Lang
;
Wang, Gefei
;
Zhang, Yu
;
Zhang, Youguang
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/30
Built-in sensing circuit (BSC)
cost-efficient
error-free
magnetic tunnel junction (MTJ)
non-volatile memory (NVM)
self-terminated
spin-transfer torque (STT)
Low Power All Spin Logic Device with Voltage Controlled Magnetic Anisotropy
会议论文
11th IEEE Nanotechnology Materials and Devices Conference (NMDC), Toulouse, FRANCE, 2016-10-09
作者:
Gao, Tianqi
;
Zeng, Lang
;
Zhang, Deming
;
Gong, Fanghui
;
Qin, Xiaowan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/30
High-Frequency Low-Power Magnetic Full-Adder Based on Magnetic Tunnel Junction With Spin-Hall Assistance
会议论文
IEEE International Magnetics Conference (Intermag), Beijing, PEOPLES R CHINA, 2015-11-01
作者:
Deng, Erya
;
Wang, Zhaohao
;
Klein, Jacques-Olivier
;
Prenat, Guillaume
;
Dieny, Bernard
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2020/01/06
Hybrid logic-in-memory
magnetic full-adder (MFA)
magnetic tunnel junction (MTJ)
spin-Hall effect (SHE)
spin-transfer torque (STT)
High-Frequency Low-Power Magnetic Full-Adder Based on Magnetic Tunnel Junction With Spin-Hall Assistance
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2015, 卷号: 51
作者:
Deng, Erya
;
Wang, Zhaohao
;
Klein, Jacques-Olivier
;
Prenat, Guillaume
;
Dieny, Bernard
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2020/01/06
Hybrid logic-in-memory
magnetic full-adder (MFA)
magnetic tunnel junction (MTJ)
spin-Hall effect (SHE)
spin-transfer torque (STT)
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