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The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth 期刊论文
Applied physics express, 2019, 卷号: 12, 期号: 3
作者:  Hu,Wei;  Die,Junhui;  Wang,Caiwei;  Yan,Shen;  Hu,Xiaotao
收藏  |  浏览/下载：145/0  |  提交时间：2019/05/09
The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD 期刊论文
CHINESE PHYSICS LETTERS, 2013, 卷号: 30, 期号: 2
Xu, PQ; Jiang, Y; Ma, ZG; Deng, Z; Lu, TP; Du, CH; Fang, YT; Zuo, P; Chen, H
收藏  |  浏览/下载：12/0  |  提交时间：2014/01/17
Intersubband absorption properties of high al content alxga1?xn/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文
Nanoscale research letters, 2012, 卷号: 7, 期号: 1
作者:  Sun,He Hui;  Guo,Feng Yun;  Li,Deng Yue;  Wang,Lu;  Wang,Dong Bo
收藏  |  浏览/下载：35/0  |  提交时间：2019/05/09
Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9
Sun, HH; Guo, FY; Li, DY; Wang, L; Zhao, DG; Zhao, LC
收藏  |  浏览/下载：20/0  |  提交时间：2013/09/17
Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1
Sun, HH; Guo, FY; Li, DY; Wang, L; Wang, DB; Zhao, LC
收藏  |  浏览/下载：31/0  |  提交时间：2013/09/18
Comparative studies of constitutive properties of nanocrystalline and bulk iron during compressive deformation 期刊论文
ACTA MATERIALIA, 2011, 卷号: 59, 期号: 9, 页码: 3384
Yu, XH; Zhang, JZ; Wang, LP; Ding, ZJ; Jin, CQ; Zhao, YS
收藏  |  浏览/下载：48/0  |  提交时间：2013/09/17
The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films 期刊论文
CHINESE SCIENCE BULLETIN, 2011, 卷号: 56, 期号: 25, 页码: 2739
Ma, ZG; Xing, ZG; Wang, XL; Chen, Y; Xu, PQ; Cui, YX; Wang, L; Jiang, Y; Jia, HQ; Chen, H
收藏  |  浏览/下载：23/0  |  提交时间：2013/09/23
Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 3, 页码: 465
Zhang, YC; Xing, ZG; Ma, ZG; Chen, Y; Ding, GJ; Xu, PQ; Dong, CM; Chen, H; Le, XY
收藏  |  浏览/下载：24/0  |  提交时间：2013/09/23
Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 103, 期号: 9
Mei, F; Fu, QM; Peng, T; Liu, C; Peng, MZ; Zhou, JM
收藏  |  浏览/下载：14/0  |  提交时间：2013/09/17
Growth of semi-insulating GaN using N-2 as nucleation layer carrier gas combining with an optimized annealing time 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 6, 页码: 1645
Zhou, ZT; Xing, ZG; Guo, LW; Chen, H; Zhou, JM
收藏  |  浏览/下载：7/0  |  提交时间：2013/09/17

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