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CORC

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Variability-aware TCAD Based Design-Technology Co-Optimization Platform for 7nm Node Nanowire and Beyond 其他
2016-01-01
Wang, Y.; Cheng, B.; Wang, X.; Towie, E.; Riddet, C.; Brown, A. R.; Amoroso, S. M.; Wang, L.; Reid, D.; Liu, X.; Kang, J.; Asenov, A.
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
Density of state determination of two types of intra-gap traps in dye-sensitized solar cells and its influence on device performance 期刊论文
physical chemistry chemical physics, 2014
Wang, Yi; Wu, Dapeng; Fu, Li-Min; Ai, Xi-Cheng; Xu, Dongsheng; Zhang, Jian-Ping
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/11
An optimized UWB correlator design with the consideration of the impacts from the ESD protection devices 期刊论文
science china information sciences, 2013
Shi ZiTao; Wang Albert; Cheng YuHua
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11
An optimized UWB correlator design with the consideration of the impacts from the ESD protection devices 期刊论文
Science China(Information Sciences), 2013
SHI ZiTao; CHENG YuHua
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top-down approach 期刊论文
frontiers of physics in china, 2010
Huang, Ru; Wang, Run-sheng
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
A Wideband Predictive "Double-pi" Equivalent-Circuit Model for On-Chip Spiral Inductors 期刊论文
ieee电子器件汇刊, 2009
Wang, Chuan; Liao, Huailin; Li, Chen; Huang, Ru; Wong, Waisum; Zhang, Xin; Wang, Yangyuan
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
Fabrication and transport behavior investigation of gate-all-around silicon nanowire transistor from top-down approach (invited) 其他
2009-01-01
Huang, Ru; Wang, Runsheng; Tian, Yu; Zhuge, Jing; Zhang, Liangliang; Liu, Changze; Wang, Yiqun; Ai, Yujie; Wang, Yangyuan
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility 期刊论文
ieee电子器件汇刊, 2008
Wang, Runsheng; Liu, Hongwei; Huang, Ru; Zhuge, Jing; Zhang, Liangliang; Kim, Dong-Won; Zhang, Xing; Park, Donggun; Wang, Yangyuan
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10
Threshold voltage of MOSFET devices extracted by normalized mutual integral difference operator 期刊论文
chinese journal of electronics, 2003
He, J; Zheng, TL; Zhang, X; Wang, YY
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/13
Normalized mutual integral difference method to extract threshold voltage of MOSFETs 期刊论文
ieee electron device letters, 2002
He, J; Xi, XM; Chan, MS; Cao, KY; Hu, CM; Li, YX; Zhang, X; Huang, R; Wang, YY
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10

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