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| MOS capacitance - Voltage characteristics II Sensitivity of electronic trapping at dopant impurity from parameter variations 期刊论文 http://dx.doi.org/10.1088/1674-4926/32/12/121001, 2011 Jie, Binbi; Sah, Chihtan; 揭斌斌 收藏  |  浏览/下载:5/0  |  提交时间:2015/07/22
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| MOS capacitance-voltage characteristics from electron-trapping at dopant donor impurity 期刊论文 http://dx.doi.org/10.1088/1674-4926/32/4/041001, 2011 Jie, Binbi; Sah, Chihtan; 揭斌斌 收藏  |  浏览/下载:5/0  |  提交时间:2015/07/22
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| MOS capacitance - Voltage characteristics III Trapping capacitance from 2-charge-state impurities 期刊论文 http://dx.doi.org/10.1088/1674-4926/32/12/121002, 2011 Jie, Binbi; Sah, Chihtan; 揭斌斌 收藏  |  浏览/下载:3/0  |  提交时间:2015/07/22
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| Spatial distribution of impurities in ZnO nanotubes characterized by cathodoluminescence 期刊论文 http://dx.doi.org/10.1166/jnn.2007.661, 2007 Yuan, X. L.; Dierre, B.; Wang, J. B.; Zhang, B. P.; Sekiguchi, T.; 张保平 收藏  |  浏览/下载:3/0  |  提交时间:2015/07/22
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| Codoped configuration effect on p-type doping efficiency in GaN 期刊论文 2004 Li, JC; Kang, JY; Wang, Z; Chen, YH; Ye, XL; 康俊勇 收藏  |  浏览/下载:2/0  |  提交时间:2013/12/12
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| Electronic structures of substitutional C and O impurities in wurtzite GaN 期刊论文 http://dx.doi.org/10.1016/S0925-3467(03)00049-1, 2003 Liu, C.; Kang, J. Y.; 康俊勇 收藏  |  浏览/下载:3/0  |  提交时间:2013/12/12
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| GaP:N液相外延层中杂质对PL谱的影响 期刊论文 1997 林秀华; 江炳熙 收藏  |  浏览/下载:2/0  |  提交时间:2016/05/17
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| A BROAD PHOTOLUMINESCENCE BAND IN HEAVILY GE-DOPED GAAS GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE 期刊论文 http://dx.doi.org/10.1063/1.358415, 1994 Kang, J. Y.; Huang, Q. S.; 康俊勇 收藏  |  浏览/下载:3/0  |  提交时间:2013/12/12
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