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新疆理化技术研究所 [17]
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期刊论文 [43]
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Quantum Dots Modified ZnO Based Fast-Speed Response Ultraviolet Photodetector
期刊论文
Zhongguo Jiguang/Chinese Journal of Lasers, 2022, 卷号: 49, 期号: 13
作者:
L. Sun
;
D. Wang
;
D. Fang
;
X. Fang
;
Z. Zhang
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/06/14
Coexistence of (O-2)(n-) and Trapped Molecular O-2 as the Oxidized Species in P2-Type Sodium 3d Layered Oxide and Stable Interface Enabled by Highly Fluorinated Electrolyte
期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2021, 卷号: 143
作者:
Zhao, Chong
;
Li, Chao
;
Liu, Hui
;
Qiu, Qing
;
Geng, Fushan
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/01/10
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
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  |  
浏览/下载:41/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Electric field controllable high-spin SrRuO3 driven by a solid ionic junction
期刊论文
PHYSICAL REVIEW B, 2020, 卷号: 101, 期号: 21
作者:
Lu, Jingdi
;
Si, Liang
;
Yao, Xiefei
;
Tian, Chengfeng
;
Wang, Jing
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2020/12/16
MAGNETIC-PROPERTIES
SEMICONDUCTORS
FERROMAGNETISM
SPECTROSCOPY
OXIDE
Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:
Li, Zongzhen
;
Liu, Tianqi
;
Bi, Jinshun
;
Yao, Huijun
;
Zhang, Zhenxing
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2022/01/19
High-k HfO2
Heavy ion irradiation
Reliability
Charge trapping
Oxygen vacancy
Oxygen Vacancy Defects Boosted High Performance p-Type Delafossite CuCrO2 Gas Sensors
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 40, 页码: 34727-34734
作者:
Tong, Bin
;
Deng, Zanhong
;
Xu, Bo
;
Meng, Gang
;
Shao, Jingzhen
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/25
p-type
delafossite CuCrO2
singly ionized oxygen vacancy
sensitivity
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:
Jiang, Shanshan
;
He, Gang
;
Liu, Mao
;
Zhu, Li
;
Liang, Shuang
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2019/06/10
electrical properties
forming gas annealing
high-k gate dielectrics
interface chemistry
metal-oxide-semiconductor capacitors
First-Principles Study of Hydrogen Behaviors at Oxide/Ferrite Interface in ODS Steels
期刊论文
ACTA METALLURGICA SINICA, 2018, 卷号: 54, 期号: 2, 页码: 325-338
作者:
Feng Yuchao
;
Xing Weiwei
;
Wang Shoulong
;
Chen Xingqiu
;
Li Dianzhong
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2021/02/02
ODS steel
Y2Ti2O7/bcc-Fe interface
hydrogen
first-principles calculation
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
作者:
Yang, L (Yang, Ling)[ 1,2 ]
;
Zhang, QZ (Zhang, Qingzhu)[ 1,3 ]
;
Huang, YB (Huang, Yunbo)[ 1,2 ]
;
Zheng, ZS (Zheng, Zhongshan)[ 1,2 ]
;
Li, B (Li, Bo)[ 1,2 ]
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2018/09/18
Anneal
Finfet
On-state Bias
Total Ionizing Dose (Tid)
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
作者:
Li, XL (Li, Xiao-Long)
;
Lu, W (Lu, Wu)
;
Wang, X (Wang, Xin)
;
Yu, X (Yu, Xin)
;
Guo, Q (Guo, Qi)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2018/05/14
Ionizing Radiation Damage
Enhanced Low Dose Rate Sensitivity (Eldrs)
Switched Temperature Irradiation
Gate-controlled Lateral Pnp Transistor (glPnp)
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