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A10 Gb/s 1.5 μm Widely Tunable Directly Modulated InGaAsP/InP DBR Laser 期刊论文
CHINESE PHYSICS LETTERS, 2020, 卷号: 37, 期号: 6, 页码: 064201
作者:  Dai-Bing Zhou ;   Song Liang;   Yi-Ming He ;   Yun-Long Liu ;   Wu Zhao ;   Dan Lu ;   Ling-Juan Zhao ;   Wei Wang
收藏  |  浏览/下载：10/0  |  提交时间：2021/06/17
Analysis and optimization of 1.5-μm InGaAsP/InP MQWs electroabsorption modulator 期刊论文
Optik, 2019, 卷号: 182, 页码: 1088-1092
作者:  Dai-bing Zhou ;   Song Liang;   Hui-tao Wang;   Wu Zhao;   Rui-kang Zhang;   Ling-juan Zhao;   Wei Wang
收藏  |  浏览/下载：4/0  |  提交时间：2020/07/31
Semiconductor laser using multimode interference principle 期刊论文
OPTICS AND LASER TECHNOLOGY, 2018, 卷号: 98, 页码: 75-78
作者:  Gong, Zisu;  Yin, Rui;  Ji, Wei;  Wu, Chonghao
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/11
Novel programmable microwave photonic filter with arbitrary filtering shape and linear phase 期刊论文
OPTICS EXPRESS, 2017
Zhu, Xiaoqi; Chen, Feiya; Peng, Huanfa; Chen, Zhangyuan
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells 期刊论文
APPLIED SURFACE SCIENCE, 2016, 卷号: 389
作者:  Yang, WX(杨文献);  Dai, P(代盼);  Ji, L(季莲);  Tan, M;  Wu, YY(吴渊渊)
收藏  |  浏览/下载：43/0  |  提交时间：2017/03/11
Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy 期刊论文
APPLIED PHYSICS EXPRESS, 2016, 卷号: 9, 期号: 1
作者:  Dai, P(代盼);  Lu, SL(陆书龙);  Uchida, SR;  Ji, L(季莲);  Wu, YY(吴渊渊)
收藏  |  浏览/下载：66/0  |  提交时间：2017/03/11
Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 55, 期号: 2
作者:  Wu, YY;  Ji, L(季莲);  Dai, P(代盼);  Tan, M(谭明);  Lu, SL(陆书龙)
收藏  |  浏览/下载：25/0  |  提交时间：2017/03/11
A dual-grating InGaAsP/InP DFB laser integrated with a SOA for THz generation 期刊论文
ieee photonics technology letters, 2016, 卷号: 28, 期号: 21, 页码: 2307-2310
Qiufang Deng; Junjie Xu; Lu Guo; Song Liang; Lianping Hou; Hongliang Zhu
收藏  |  浏览/下载：14/0  |  提交时间：2017/03/10
Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes 期刊论文
journal of alloys and compounds, 2015, 卷号: 631, 页码: 283-287
作者:  Lin, Tao;  Sun, Hang;  Zhang, Haoqing;  Wang, Yonggang;  Lin, Nan
收藏  |  浏览/下载：18/0  |  提交时间：2015/07/15
Laser diode  MOCVD  GaAs  InP  
Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement 期刊论文
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 卷号: 252, 期号: 6, 页码: 4
作者:  Harasawa, R;  Yamamoto, N;  Wu, H(吴昊);  Aritake, T;  Lu, SL(陆书龙)
收藏  |  浏览/下载：11/0  |  提交时间：2015/12/31

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