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Physical effect on transition from blocking to conducting state of barrier-type thyristor 期刊论文
半导体学报/Journal of Semiconductors, 2010, 卷号: 31, 期号: 12, 页码: 33-37
作者:  Li HR(李海蓉);  Li SY(李思渊)
收藏  |  浏览/下载:4/0  |  提交时间:2016/10/21
A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor 期刊论文
半导体学报/Journal of Semiconductors, 2010, 卷号: 31, 期号: 8, 页码: 65-69
作者:  Li HR(李海蓉);  Li SY(李思渊)
收藏  |  浏览/下载:3/0  |  提交时间:2016/10/21
Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH 期刊论文
半导体学报/Journal of Semiconductors, 2009, 卷号: 30, 期号: 4, 页码: 44-47
作者:  Ji T(季涛);  Yang LC(杨利成);  Li HR(李海蓉);  He SH(何山虎);  Li SY(李思渊)
收藏  |  浏览/下载:3/0  |  提交时间:2016/10/21


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