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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Constraining ribbon rock dolomitization by Mg isotopes: Implications for the 'dolomite problem' 其他 2016-01-01 Li, Fang-Bing; Teng, Fang-Zhen; Chen, Ji-Tao; Huang, Kang-Jun; Wang, Shui-Jiong; Lang, Xian-Guo; Ma, Hao-Ran; Peng, Yong-Bo; Shen, Bing 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Ribbon rock  Mg isotopes  Dolomite  Doushantuo  Clay mineral  EDIACARAN DOUSHANTUO FORMATION  MAGNESIUM-ISOTOPE  MARINE CARBONATES  EXPERIMENTAL CALIBRATION  MICROBIAL MEDIATION  SEAWATER CHEMISTRY  FRACTIONATION  PRECIPITATION  DIAGENESIS  LIMESTONE   Scaling Up Physical Design: Challenges and Opportunities 其他 2016-01-01 Luo, Guojie; Zhang, Wentai; Zhang, Jiaxi; Cong, Jason 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Physical Design  Detailed Placement  FPGA  TCL  Distributed Computing  Spark  ALGORITHM   Correlation between gate length, geometry and electrostatic driven performance in ultra-scaled silicon nanowire transistors 其他 2015-01-01 Al-Ameri, Talib; Wang, Y.; Georgiev, V.P.; Adamu-Lema, F.; Wang, X.; Asenov, A. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors 其他 2015-01-01 Georgiev, V. P.; Ali, T.; Wang, Y.; Gerrer, L.; Amoroso, S. M.; Asenov, Asen 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 nanowires  simulations  quantum effects  scalling of tranistors  CMOS devices   Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors 其他 2015-01-01 Georgiev, V.P.; Ali, T.; Wang, Y.; Gerrer, L.; Amoroso, S.M.; Asenov, Asen 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors 其他 2015-01-01 Al-Ameri, Talib; Wang, Y.; Georgiev, V. P.; Adamu-Lema, F.; Wang, X.; Asenov, A. 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 CMOS  electrostatics  nanowire transistors  performance  quantum effects  TCAD   Investigating scattering effects in nano-scale double gate MOSFETs by using direct solution of the Boltzmann transport equation and Poisson-Schrodinger equation method 其他 2010-01-01 Du, Gang; Lu, Tiao; Zhang, Pingwen; Liu, Xiaoyan; Han, Ruqi 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 An analytical 2D current model of double - gate Schottky - Barrier MOSFETs 其他 2008-01-01 Yu, Ning Zhao; Du, Gang; Jin, Feng Kang; Xiao, Yan Liu; Han, Ruqi 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10 An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs 其他 2008-01-01 Zhao, Yu Ning; Du, Gang; Kang, Jin Feng; Liu, Xiao Yan; Han, Ruqi 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 Schottky-Barrier  2D potential distribution  Tunneling current  SIMULATION   An assessment of the performance for double gate schottky barrier MOSFETs with modulated back gate 其他 2007-01-01 Zhai, Yu-Jia; Kang, Jin-Feng; Du, Gang; Han, Ru-Qi; Liu, Xiao-Yan 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10