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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Impact of the Gate Structure on ESD Characteristic of Tunnel Field-Effect Transistors 会议论文 2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018-01-01 作者:  Yang, Zhaonian;  Yu, Ningmei;  Liou, Juin J. 收藏  |  浏览/下载：24/0  |  提交时间：2019/12/20 electrostatic discharge (ESD)  electric field  gate structure  tunnel field-effect transistor (TFET)   Tunnel MOSFET with partial channel underlap exhibiting low subthreshold slope 会议论文 作者:  Zhang, Wen-Hao;  Li, Zun-Cao;  Guan, Yun-He;  Xiong, Qi;  Zheng, Chuang 收藏  |  浏览/下载：22/0  |  提交时间：2019/11/26 Energy-band diagram  Metal oxides  Short-channel effect  Silvaco  Strong immunity  Subthreshold slope  Tunneling field-effect transistors  Two dimensional device simulation   Electronic structure and optical property of semiconductor nanocrystallites 会议论文 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 Xia JB; Chang K; Li SS 收藏  |  浏览/下载：36/0  |  提交时间：2010/11/15 semiconductor cluster  self-assembled quantum dot  diluted magnetic semiconductor  electronic structure  resonant tunneling  QUANTUM DOTS  EXCITON-STATES  SPHERES   Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Jiang DS;  Wang HL;  Wang HL;  Wang HL 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 superlattices  GaAs/AlAs  electric field domains  tunnelling  OSCILLATIONS   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 会议论文 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 作者:  Liu J 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 GaAs/AlAs  superlattices  transport  tunnelling  Landau level  NEGATIVE DIFFERENTIAL CONDUCTIVITY  LOW-FIELD MOBILITY  SEMICONDUCTOR SUPERLATTICE  TEMPERATURE-DEPENDENCE  CONDUCTANCE  TRANSPORT  LOCALIZATION  MINIBANDS