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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Calculation of The Mixing Entropy of Sn in a Tin-Iron Bilayer 会议论文 作者:  Li, Hai-bin;  Huang, Qing-xue;  Wang, Jian-mei;  Gui, Hai-lian;  Ma, Qin 收藏  |  浏览/下载：21/0  |  提交时间：2019/11/15 active atom  interface reaction  mole mass  quality fraction  mixing entropy   Atomic force microscopy and X-ray photoelectron spectroscopy study on the surface and interface states of Liq and ITO films 会议论文 2010 International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2010, Shenzhen, China, November 6, 2010 - November 8, 2010 作者:  Li, Jianfeng;  Song, Qing;  Shi, Weibing;  Zhang, Fujia 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Atomic spectroscopy  Absorption  Absorption spectroscopy  Argon  Atomic force microscopy  Binding energy  Electron energy levels  Electrons  Indium  ITO glass  Materials  O rings  Oxygen  Photoelectricity  Photons  Spectrum analysis  Sputtering  Surface morphology  Surfaces  Tin  X ray photoelectron spectroscopy  X rays  AFM observation  Air molecules  Argon ion  Blue electroluminescent materials  C atoms  Coated glass  Coordination bonds  Different sizes  Effect of oxygen  Indium tin oxide  ITO films  Li atoms  Liq/ITO  Organic light-emitting devices  Organic materials  Quinolate  Sputtering time  Surface and interface electron state  Surface and interface state  X-ray photoelectron spectroscopy studies  XPS  XPS spectra   The activity coefficient of tin in the solid solution of iron 会议论文 Hong Kong, China, December 12, 2011 - December 13, 2011 作者:  Li, Hai-Bin;  Huang, Qing-Xue;  Wang, Jian-Mei;  Gui, Hai-Lian;  Ma, Qin 收藏  |  浏览/下载：0/0  |  提交时间：2020/11/15 Atoms  Iron  Thermodynamic properties  Tin  Active atoms  Interface reactions  Iron layers  Substrate surface  Tin atoms  Weight percentages   The Activity Coefficient of Tin in the Solid Solution of Iron 会议论文 作者:  Li, Hai-bin;  Huang, Qing-xue;  Wang, Jian-mei;  Gui, Hai-lian;  Ma, Qin 收藏  |  浏览/下载：12/0  |  提交时间：2019/11/15 interface reaction  active atom  diffusion quantity  activity  the activity coefficient   Failure of flip-chip circuit interconnects under high current density (EI收录) 会议论文 Advanced Materials Research, Shenyang, China, July 28, 2010 - July 30, 2010 作者:  Lu, Yudong[1,2];  He, Xiaoqi[1];  En, Yunfei[1];  Wang, Xin[2];  Zhuang, Zhiqiang[2] 收藏  |  浏览/下载：0/0  |  提交时间：2019/04/16 Atoms  Chemical potential  Chemicals  Current density  Diffusion  Electromigration  Flip chip devices  Lead  Product development  Tin