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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Triaxiality in Neutron-Rich Nuclei with A similar to 100-126, Z Beyond and Below Ru (Z=44) 会议论文 作者:  Liu, Y. X.;  Zhu, S. J.;  Yeoh, E. Y.;  Li, H. J.;  Wang, J. G. 收藏  |  浏览/下载：83/0  |  提交时间：2018/08/20 Triaxial Deformation  Shape Transition and Coexistence  gamma Vibrations  Chiral Symmetry Breaking  Wobbling Motion  Neutron-Rich Nuclei  Fission gamma Data   Development of the large area MCP-PMT 会议论文 7th international symposium on advanced optical manufacturing and testing technologies: optoelectronics materials and devices for sensing and imaging, aomatt 2014, harbin, china, 2014-04-26 作者:  Tian, Jinshou;  Liu, Hulin 收藏  |  浏览/下载：21/0  |  提交时间：2015/03/31 Enhancement of Glass-forming Ability of CoFeBSiNb Bulk Glassy Alloy with Good Soft-magnetic Properties 会议论文 The 16th International Symposium on Metastable, Amorphous and Nanostructured Materials, 北京, 2006-7 Man QK; Sun HJ; Dong YQ; Shen BL 收藏  |  浏览/下载：18/0  |  提交时间：2009/12/29 Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China He C.-F.; Lu G.-G.; Shan X.-N.; Sun Y.-F.; Li T.; Qin L.; Yan C.-L.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Jiang DS;  Wang HL;  Wang HL;  Wang HL 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 superlattices  GaAs/AlAs  electric field domains  tunnelling  OSCILLATIONS