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simulation of ingan/gan light-emitting diodes with patterned sapphire substrate 会议论文
12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012, Shanghai, China, August 28, 2012 - August 31, 2012
Sheng Yang; Xia Chang Sheng; Simon Li Z.M.; Cheng Li Wen
收藏  |  浏览/下载：10/0  |  提交时间：2013/09/22
Large-scale synthesis of In/sub 2/O/sub 3/ nanowires and their characterization 会议论文
Materials Science Forum, Fifth Pacific Rim International Conference on Advanced Materials and Processing PRICM-5, Beijing, China, INSPEC
Fanhao Zeng; Zhang, X.
收藏  |  浏览/下载：4/0
Nonlinear intersubband optical absorption of asymmetric semiconductor quantum wells pumped by terahertz and infrared fields 会议论文
international symposium on photoelectronic detection and imaging 2009: terahertz and high energy radiation detection technologies and applications, beijing, china, 2009-06-17
Zhu Haiyan; Zhang Tongyi(张同意); Zhao Wei(赵卫）
收藏  |  浏览/下载：8/0  |  提交时间：2011/10/08
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
He C.-F.; Lu G.-G.; Shan X.-N.; Sun Y.-F.; Li T.; Qin L.; Yan C.-L.; Ning Y.-Q.; Wang L.-J.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells 会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y; Zhu XP; Song GF; Cao Q; Guo L; Li YZ; Chen LH
收藏  |  浏览/下载：164/42  |  提交时间：2010/03/29
Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation 会议论文
conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004
Xu Y; Zhu XP; Gan QQ; Song GF; Cao Q; Guo, L; Li YZ; Chen LH
收藏  |  浏览/下载：575/277  |  提交时间：2010/03/29
Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 会议论文
10th international autumn meeting on gettering and defect engineering in semiconductor technology (gadest 2003), berlin, germany, sep 21-26, 2003
Yu JZ; Li C; Cheng BW; Wang QM
收藏  |  浏览/下载：29/0  |  提交时间：2010/11/15
Growth and photoluminescence of InAlGaN films 会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:  Li DB
收藏  |  浏览/下载：13/2  |  提交时间：2010/10/29
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15

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