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X-ray detectors based on p(+)-Si/n-ZnO abrupt heterojunctions 会议论文
作者:  Zhao Xiaolong;  He Yongning;  Chen Liang;  Liu Jinliang;  Ouyang Xiaoping
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/02
Nitride-oxide based p-n heterojunctions synthesized by depositing VO2film on p-GaN/sapphire substrate 会议论文
第一届全国宽禁带半导体学术及应用技术会议, 苏州, 2015-10-30
作者:  Bian JM(边继明);  Li XX(黎晓璇);  Wang MH(王敏焕);  Luo YM(骆英民);  Zhang YZ(章俞之)
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/09
Amorphous/crystalline silicon heterojunctions under intensive illumination 会议论文
Wang, Qi; Page, M.R.; Iwaniczko, E.; Xu, Y.-Q.; Roybal, L.; Duda, A.; Hasoon, F.; Ward, S.; Wang, Dong; Yu, P.R.
收藏  |  浏览/下载:2/0  |  提交时间:2015/11/13
Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:16/0  |  提交时间:2013/03/25
ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.  


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