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A NiOx, based threshold switching selector for RRAM crossbar array application
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Xie, Hongwei
;
Liu, Yantao
;
Huang, Zhongxiao
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/20
selector device
threshold switching
resistance
switching memory (RR4M)
NiO
Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory
会议论文
Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, 2018-11-21
作者:
Zhang, Yue
;
Wang, Guanda
;
Huang, Zhe
;
Zhang, Zhizhong
;
Wang, Jinkai
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
CMOS integrated circuits
Data storage equipment
Magnetic devices
Metals
MOS devices
Oxide semiconductors
Semiconductor junctions
Spintronics
Tunnel junctions
Complementary metal oxide semiconductors
Logic applications
Logic in memory
Magnetic tunnel junction
Non-volatile memory
Spintronic device
Systematic study
Ultrahigh density
Computer circuits
A System-Level Solution for Low-Power Object Detection
会议论文
Seoul, Korea, 2019
作者:
Li, Fanrong
;
Mo, Zitao
;
Wang, Peisong
;
Liu, Zejian
;
Zhang, Jiayun
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2022/06/14
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2018/10/08
Charge sharing
single-event upset (SEU)
static random access memory
total ionizing dose (TID)
Study of Shape Memory Alloy De-icing Device for Nonrotating Components of Aircrafts
会议论文
IOP Conference Series: Materials Science and Engineering, 2018-06-16
作者:
Liu, X.
;
Xing, Y.
;
Zhao, L.
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  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
Aerospace industry
Aircraft
Bridge decks
Composite materials
Energy conservation
Numerical methods
Shape memory effect
High stress
Low Power
Output rate
Pre-strain
Rotating blades
Shape memory alloys(SMA)
Snow and ice removal
A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM
会议论文
作者:
Yan, Weiwei
;
Wang, Bin
;
Zeng, Chuanbin
;
Geng, Chao
;
Liu, Tianqi
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2018/08/20
Heavy ion irradiation
Single event upset
Active delay element
SRAM cell
Radiation hardened
Silicon-on-insulator
Influence of heavy ion flux on single event effect testing in memory devices
会议论文
作者:
Xi, Kai
;
Luo, Jie
;
Liu, Jie
;
Sun, Youmei
;
Hou, Mingdong
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2018/08/20
Swift heavy ions
Ion flux
Single event effect
Memory device
Influence of heavy ion flux on single event effect testing in memory devices
会议论文
作者:
Xi, Kai
;
Sun, Youmei
;
Luo, Jie
;
Liu, Jie
;
Liu, Tianqi
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2018/08/20
Swift heavy ions
Ion flux
Single event effect
Memory device
To probe the performance of perovskite memory device:defects property and hysteresis
会议论文
Ziqi Xu
;
Nengxu Li
;
Guanhaojie Zheng
;
Qi Chen
;
Huanping Zhou
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
perovskite
memory device
set voltage
trap density
hysteresis
perovskite
memory device
set voltage
trap density
hysteresis
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