CORC

浏览/检索结果: 共66条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Improving the Performance of Organic Field-Effect Transistors by Using WO3 Buffer Layer 会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:  Yun, Zhao;  Li, Shi-guang;  Chen, Si-yu
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/20
Effect of traps on DC surface flashover characteristics of polymer in vacuum 会议论文
作者:  Zhang, Zhenjun;  Li, Jie;  Wang, Hui;  Wang, Bin;  Jiang, Wu
收藏  |  浏览/下载:12/0  |  提交时间:2019/11/19
Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter 会议论文
作者:  He, Hongyu;  Liu, Yuan;  Wang, Hao;  Lin, Xinnan;  Zheng, Xueren
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/05
Cooperative Driving Control Algorithm at Non-Signalized Crossings under Condition of Internet-Connected Vehicles 会议论文
CICTP 2018: Intelligence, Connectivity, and Mobility - Proceedings of the 18th COTA International Conference of Transportation Professionals, 2018-07-05
作者:  Wenjuan, E.;  Wang, X.;  Jing, Y.;  Ding, Y.
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/30
An S band tracking receiver LNA for satellite communications 会议论文
2018 IEEE International Workshop on Antenna Technology, iWAT2018 - Proceedings
作者:  Arsalan, M.;  Wu, F.
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/30
A L-band Active Cold Noise Source for Radiometer Calibration 会议论文
Xiamen, PEOPLES R CHINA, OCT 22-25, 2017
作者:  Duan, Yongqiang;  Wang, ZhenZhan
收藏  |  浏览/下载:17/0  |  提交时间:2018/05/04
Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN area under the recessed gate 会议论文
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
作者:  Huang, H.;  Sun, Z.;  Zhang, Z.;  Shen, R.;  Liang, Y.C.
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/03
Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices 会议论文
作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Wang, Yun-Hsiang;  Zhao, Cezhou
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/02
Off-state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si 会议论文
作者:  Jiang, Huaxing;  Lu, Xing;  Liu, Chao;  Li, Qiang;  Lau, Kei May
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/02
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs 会议论文
作者:  Yu, Kun;  Liu, Chao;  Jiang, Huaxing;  Lu, Xing;  Lau, Kei May
收藏  |  浏览/下载:7/0  |  提交时间:2019/11/26


©版权所有 ©2017 CSpace - Powered by CSpace