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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 In situ visualization of domain structure evolution during field cooling in 0.67PMN-0.33PT single crystal 会议论文 作者:  Ushakov, A. D.;  Esin, A. A.;  Chezganov, D. S.;  Turygin, A. P.;  Akhmatkhanov, A. R. 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 Recent developments for the investigation of ground-state transitions in heavy one-electron ions 会议论文 作者:  Stoehlker, Th.;  Gumberidzel, A.;  Banas, D.;  Beyer, H. F.;  Bosch, F. 收藏  |  浏览/下载：14/0  |  提交时间：2018/08/20 Recent developments for the investigation of ground-state transitions in heavy one-electron ions 会议论文 作者:  Stoehlker, Th.;  Gumberidzel, A.;  Banas, D.;  Beyer, H. F.;  Bosch, F. 收藏  |  浏览/下载：16/0  |  提交时间：2018/08/20 Preparation, characterization and optical properties of carbon doped ZnO nanocrystal (EI CONFERENCE) 会议论文 ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China Wang Z.; Li S.; Lu Y.; Zhao D.; Liu J.; Wang L.; Zhang J.; Gao Y.; Wang Z. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 In this paper  we prepared carbon doped nanocrystalline ZnO by pyrolyzed zinc stearate at 250C and 300C respectively. The XRD curves indicate the sample has polycrystalline hexagonal wurtzite structure. The XRD data of the sample prepared at 250C and 300C has a bigger angle shift about 0.05and 0.3respectively. That indicate the structure of the sample has some changes. The EDS indicate the sample contains Zn  O and C. So the XRD shift may attribute to the C. The XPS indicate the C doped in the crystal lattice of ZnO of the sample prepared at 300C  and the sample prepared at 250C may be only a few of C doped in the crystal lattice of ZnO. The PL of the sample prepared at 300C only has a weak ultraviolet emission  which indicates C modified the nanocrystalline ZnO surface as a non-radiative recombination center. In this process C could non-radiatively recombine the carries on the nanocrystallin ZnO surface. The sample prepared at 250C has a strong visible emission at about 530 nm. This emission band could be attributed to oxygen vacancy because C schlepped some oxygen on the nanocrystalline ZnO surface.   Low drive-voltage and high-bandwidth electro-optic modulators based on BaTiO3 thin-film waveguides (EI CONFERENCE) 会议论文 Science and Technology of Dielectrics for Active and Passive Photonic Devices - 210th Electrochemical Society Meeting, October 29, 2006 - November 3, 2006, Cancun, Mexico Sun D. G.; Fu X. H.; Liu Z. F.; Ho S. T.; Wessels B. W. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 We investigated electro-optic modulator structures to target low drive voltage  high-speed modulation  and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study  the calculations are focused on the ideal thin film with a quadratic relation between the half-wave drive voltage V and the interaction length L in the electro-optic modulation case we obtained in previous work. With the quadratic electro-optic modulating relation and the optimal rib waveguide structure of BaTiO3/MgO thin films  the frequency-voltage-size performances for 2.5GHz  10GHz  40GHz  and 100GHz modulation bandwidths have been obtained under half-wave drive voltages of 0.8V  1.6V  3.0V and 4.8V  respectively  for the ideal film with r51=730 pm/V at 1550nm wavelength  where both the phase velocity matching condition and the conductor induced microwave attenuation are considered. The required device lengths to achieve these four typical values of modulation bandwidth are 3.3 mm  0.8 mm  0.4 mm and 0.2 mm  respectively. With the c-axis grown BaTiO3/MgO crystal thin films and the quadratic electro-optic modulating relation  an electro-optic coefficient of reff=180 pm/V for the c-axis grown BaTiO3/MgO ferro-electric thin films was measured  which is relatively far from the ideal value of r51=560 pm/V. copyright The Electrochemical Society.   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.   Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition 会议论文 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Wang, QY; Shen, WJ; Wang, J; Wang, JH; Zeng, YP; Li, JM 收藏  |  浏览/下载：196/31  |  提交时间：2010/03/29 ULTRAVIOLET-LASER EMISSION  THIN-FILMS  ZINC-OXIDE  ROOM-TEMPERATURE   Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W 收藏  |  浏览/下载：26/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  COHERENT ISLANDS  GAAS  GROWTH  DOTS  DISLOCATIONS  TEMPERATURE  MECHANISMS  SI(001)  INGAAS   INFLUENCE OF HEAT TREATMENT ON THE STRUCTURE AND MAGNETIC PROPERTIES OF Gd5Sn4 ALLOY FOR MAGNETIC REFRIGERATION (CPCI-S收录) 会议论文 TMS2011 SUPPLEMENTAL PROCEEDINGS, VOL 1: MATERIALS PROCESSING AND ENERGY MATERIALS 作者:  Zhong, X. C.[1];  Zhang, H.[2];  Zou, M.;  Liu, Z. W.[1];  Zeng, D. C.[1] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/15 Gd5Sn4  heat treatment  crystal structure  magnetic property   Crystal structure and magnetic properties of R5Sn4 alloys, where R is Tb, Dy, Ho, and Er (CPCI-S收录) 会议论文 JOURNAL OF APPLIED PHYSICS 作者:  Zhong, X. C.[1,2];  Zou, M.[2];  Zhang, H.[2,4];  Liu, Z. W.[1];  Zeng, D. C.[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/15