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浏览/检索结果: 共23条，第1-10条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Method to Prevent Thin Film Cracking of Thin Film Encapsulation in Flexible AMOLED 会议论文 2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018-01-01 作者:  Ao, Wei[1];  Zhu, Yinghui[2];  Zhang, Jianhua[3];  Xin, Xiaogang[4];  Gao, Feng[5] 收藏  |  浏览/下载：8/0  |  提交时间：2019/04/22 PECVD  SiON Thin Film  Stress   Pseudo high dynamic range imaging based on image enhancement 会议论文 24th International Display Workshops, IDW 2017, Sendai, Japan, 2017-12-06 作者:  Liu, Shao-Li;  Wang, Yi-Fan;  Wang, Hong-Yu;  Jin, Yu-Feng;  Syu, Shen-Sian 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/02 Sea foggy image haze removal algorithm based on image fusion 会议论文 24th International Display Workshops, IDW 2017, Sendai, Japan, 2017-12-06 作者:  Liu, Shao-Li;  Wang, Yi-Fan;  Wang, Hong-Yu;  Jin, Yu-Feng;  Syu, Shen-Sian 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02 A Bulk-driven Pixel Circuit with Wide Data Voltage Range for OLEDoS Microdisplays 会议论文 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2017-01-01 作者:  Lu, Huiyuan;  Li, Hongge 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/30 microdisplay  pixel circuit  OLEDoS  AMOLED  bulk-driven   A White Balance Adjustable AMOLED Display Driver 会议论文 2015 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC), 2015-01-01 作者:  Zhang, Ziyu;  Li, Hongge 收藏  |  浏览/下载：5/0  |  提交时间：2020/01/06 AMOLED  driver  Color space  white balance   An 8-bit QVGA AMOLED Driver IC with a Polynomial Interpolation DAC 会议论文 2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2014-01-01 作者:  Yin, Xinyu;  Li, Hongge 收藏  |  浏览/下载：2/0  |  提交时间：2020/01/06 The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   氧化物薄膜晶体管的稳定性的研究 会议论文 中国真空学会2014学术年会, 广东广州, 2014-11-07 作者:  兰林锋;  肖鹏;  林振国;  王磊;  彭俊彪 收藏  |  浏览/下载：0/0  |  提交时间：2019/04/12 薄膜晶体管  氧化物半导体  AMOLED 显示   新型氧化锌基半导体材料及其在AMOLED显示中的应用 会议论文 2013广东材料发展论坛暨战略性新兴产业发展与新材料科技创新研讨会, 广州, 2013年11月1日 作者:  陶洪[1];  徐苗[1];  邹建华[1];  王磊[1];  彭俊彪[2] 收藏  |  浏览/下载：0/0  |  提交时间：2019/04/15 AMOLED显示技术与产业 会议论文 2013广东材料发展论坛——战略性新兴产业发展与新材料科技创新研讨会, 广东广州, 2013-11-01 作者:  彭俊彪 收藏  |  浏览/下载：0/0  |  提交时间：2019/04/15