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科研机构
半导体研究所 [18]
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会议论文 [18]
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2010 [1]
2008 [1]
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半导体材料 [15]
半导体物理 [2]
光电子学 [1]
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内容类型:会议论文
专题:半导体研究所
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Donor defect in P-diffused bulk ZnO single crystal
会议论文
29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009
Zhao YW (Zhao Youwen)
;
Zhang R (Zhang Rui)
;
Zhang F (Zhang Fan)
;
Dong ZY (Dong Zhiyuan)
;
Yang J (Yang Jun)
收藏
  |  
浏览/下载:463/158
  |  
提交时间:2010/10/11
Zinc Oxide
doping
defect
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/03/09
zinc oxide
X-ray diffraction
defects
single crystal
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
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  |  
浏览/下载:177/52
  |  
提交时间:2010/03/29
DEEP-LEVEL DEFECTS
FE-DOPED INP
GROWN INP
SPECTROSCOPY
RESONANCE
WAFER
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:134/34
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:136/48
  |  
提交时间:2010/03/29
SI(111)
ALN
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH
;
Fong WK
;
Surya C
;
Lu LW
;
Ge WK
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/10/29
GaN
low-frequency noise
deep levels
deep level transient Fourier spectroscopy
DEVICES
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Kang JY
;
Shen YW
;
Wang ZG
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
defects
GaN
photoluminescence
electronic structures
YELLOW LUMINESCENCE
EPITAXIAL-FILMS
MG
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
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